An MOS voltage reference includes four MOS transistors connected in feedback circuit relationship, with the ratio of device width to length being essentially the same in the first two devices in order to provide an output voltage which is substantially constant over a range of input voltages and of temperatures.

Metal-oxide-semiconductor voltage reference

This reference voltage generator device detects a voltage corresponding to an energy gap of a semiconductor, or a voltage of a value close thereto, or a voltage based on an energy level of a semiconductor, and generates the detected voltage as a reference voltage. The reference voltage is generated by detecting a difference of threshold voltages of first and second insulated gate field-effect transistors (IGFETs). Gate electrodes of the first and second IGFETs are formed on gate insulating films which are formed on different surface areas of an identical semiconductor substrate under substantially the same conditions. The gate electrodes of the first and second IGFETs are respectively made of two semiconductors which are selected from among a semiconductor of a first conductivity type, a semiconductor of a second conductivity type and an intrinsic semiconductor made of an identical semiconductor material, and which have Fermi energy levels of values different from each other. The channels of the first and second IGFETs have an identical conductivity type. On the basis of a self-alignment structure, at least those parts of first and second polycrystalline semiconductor regions being the gate electrodes of the first and second IGFETs which are proximate to source and drain regions are doped with the same impurity as that of the source and drain regions, and a central part of one of the first and second polycrystalline semiconductor regions is doped with an impurity of a selected one of the first conductivity type and the second conductivity type.

Reference voltage generator device

The invention relates to a circuit intended to supply a reference voltage comprising a voltage generator (REF) provided with a supply terminal and an output for supplying a voltage having a given nominal value (V R ) and comprising a differential amplifier (A), fed by a first supply voltage, whose non-inverting input is connected to the output of the voltage generator (REF). An output of the differential amplifier (A) is connected to an input of a follower stage (T) through a controlled switching device (1), the follower stage (T) having its input connected to the first supply voltage through a first resistor (R 1 ) and having its output, which supplies the said reference voltage (V D ), connected on the one hand to the inverting input of the differential amplifier (A) through a divider bridge and on the other hand to the supply termianl of the voltage generator (REF). A control circuit (C) of the switching device is operated so as to receive at least the supply voltage in such a manner that the switching device (1) is closed when the supply voltage reaches a threshold for which both the voltage generator and the differential amplifier are in a nominal operating zone.

Circuit intended to supply a reference voltage

A stable temperature-insensitive constant reference voltage circuit is provided which can be implemented in either MOS or bipolar technology The circuit may be implemented by MOSFET devices on a single chip with another circuit such as an A/D converter to provide a monolithic A/D converter with its own internal reference voltage circuit The reference voltage circuit consists of a series-connected long channel MOSFET and short channel MOSFET which produce, at their junction, a temperature-independent voltage A differential circuit containing three MOSFET devices is then provided with one of the devices serving as a current source which carries the current of the other two MOSFET devices which are in parallel The gates of the two parallel MOSFET devices are connected respectively to the junction between the long channel and short channel device and to the output voltage Current divides between the two parallel MOSFET devices in such a way as to cause a constant output voltage to be produced regardless of the variations of the supply voltage sources Vdd or Vgg The various MOSFET devices are formed on the same substrate containing the circuit components being connected to the constant stable voltage reference source

MOSFET Reference voltage circuit

A NMOS transistor in the input current path of a PMOS current mirror amplifier senses any tendency to change of the voltage across a load driven by the output current of the amplifier. In response thereto, the NMOS transistor changes the input current of the amplifier to thereby vary its output current in a sense to maintain the voltage across the load constant.

Current mirror amplifier augumentation of regulator transistor current flow

A circuit which is utilized to produce a reference voltage that is substantially independent of changes in the supply line voltage and in temperature and which produces a regulated output voltage as a function of the reference voltage.

Steudel Goetz Wolfgang

Papers

Reference voltage generator and regulator

Schaltungsanordnung zur referenzspannungserzeugung