A magnetic lens assembly for providing a magnetic deflection field for a beam of charged particles is disclosed. The assembly includes a focusing lens device for providing a magnetic field which has substantially rotational symmetry in respect of a symmetry axis of the assembly and acts on the beam traversing the magnetic field as a focusing lens with an optical axis, and includes an axis shifting device for producing a corrective magnetic field which is superposable on the magnetic field provided by the focusing lens device and acts on the beam such that the optical axis is shiftable parallel to the symmetry axis of the assembly. The axis shifting device includes a first set of axially spaced apart rings which are positioned concentrically in respect of the symmetry axis and are made of a material which is substantially not electrically conductive and has a high magnetic permeability. At least one axis shifting coil is provided with a plurality of current conductor windings for producing the corrective magnetic field. The current conductor windings of the axis shifting coil engage around at least one of the rings of the first ring set.

Particle-optical component and system comprising a particle-optical component

A timing control circuit controls the timing for applying a voltage to a sub deflector when changing a position to be irradiated with the charged-particle beam. A control computer compares a target line width and a line width of a pattern written with the timing for applying voltage to the sub deflector changed, and determines appropriate timing for applying voltage to the sub deflector from a timing range corresponding to a predetermined allowable range of the difference between the target line width and the line width of the written pattern. The control computer then controls the timing control circuit based on the determined timing.

Charged particle beam writing apparatus and charged particle beam writing method

A variable shaped beam exposure method and a pattern forming method using the same exhibit excellent linearity insofar as the variation in measured critical dimension from design critical dimension is concerned. First, the design critical dimension of one of a plurality of patterns that can be formed through the use of the variable shaped beam exposure method is determined. If the value of the critical dimension exceeds a predetermined value, the selected pattern is formed using a first exposure dose which has previously designated for this case. On the other hand, if the value of the critical dimension is less than the predetermined value, the selected pattern is formed using a second exposure dose that is equal to the first exposure dose plus a supplementary exposure dose.

Electron beam exposure method having good linearity with respect to producing fine patterns

The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Pr-Containing Scintillator Single Crystal, Method of Manufacturing the Same, Radiation Detector, and Inspection Apparatus

In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

Power sag detection and control in ion implanting system

An automatic control servo system having a number of cascaded loops equal in number to the number of voltage sources applied to elements of a high-emittance electron source provides accurate and stable electron emission current control independently of beam energy and accommodates large differences in thermal mass between the elements of the electron source, as may be encountered in high-emittance, indirectly heated cathode electron sources. Individual loops of the system may be critically tuned independently of each other.

Servo control for high emittance electron source

A charged particle beam projection system includes a source of charged particles and a first doublet of condenser lenses with a first symmetry plane through which the beam is directed, located lower on the column. A trim aperture element is located at the first symmetry plane of the first doublet wherein the trim aperture serves as a first blanking aperture. Below the trim aperture there is a shaping aperture. Next is a second doublet of condenser lenses with a second symmetry plane. A third aperture, which is located at the symmetry plane of the second doublet serves as another blanking aperture.

Blanking system for electron beam projection system

A method for improving image fidelity on a resist. The method adjusts the intensity distribution of the electron beam such that the feature size at the edges and the center of a subfield have a same width “w”. This is accomplished by intentionally increasing the incident intensity where the images are small (more pronounced blurring), and intentionally decreasing the incident intensity where the images are large (less pronounced blurring). This can be achieved, for example, by maintaining a cathode temperature profile which increases or decreases radially by an appropriate amount.

Compensation of within-subfield linewidth variation in e-beam projection lithography

A small pinhole aperture and a scintillator are used to observe resolution in a charged particle beam system which is particularly applicable to electron beam projection devices in which the beam is several orders of magnitude larger than the desired resolution and minimum feature size to be produced. A pattern having a feature which is of comparable size to the desired resolution to be observed is scanned across the aperture in two dimensions and a synchronized display of measured light output from the scintillator allows real-time observation of the effects of correction adjustments on the resolution of the system. In this manner, a rough adjustment to near optimum corrections can be obtained over the deflection field in a much reduced number of iterations.

On-line dynamic corrections adjustment method

PROBLEM TO BE SOLVED: To correct the change in the space charge effect of the image forming system of a charged particle beam projection exposure device caused by the change of a transmitted beam current. SOLUTION: A correcting lens is inserted into an optical system at the position of a space charge lens SCL, and the correcting lens has the focal distance which is changed in inverse proportion to a beam current, is equal in magnitude to the focal distance of the equivalent space charge lens to all beam currents, and has the opposite symbol. The space charge lens SCL diverges the optical path WO along the optical path TWC focusing an electron beam beyond the normal image face and workpiece face WP and corrects the space charge effect.

Steven D. Golladay

Papers

Servo control for high emittance electron source

Blanking system for electron beam projection system

Compensation of within-subfield linewidth variation in e-beam projection lithography

On-line dynamic corrections adjustment method

Space charge effect correction in charged particle beam device