An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

Process gas management for an inductively-coupled plasma deposition reactor

A semiconductor device includes an isolation region (11a) formed in a semiconductor substrate (10), an active region made of the semiconductor substrate (10) surrounded by the isolation region (11a) and having a trench portion, a MIS transistor of a first-conductivity type having a gate electrode (13) formed on the active region, a first sidewall (19) formed on a side surface of the gate electrode between the gate electrode (13) and the trench portion as viewed in the top, and a silicon mixed crystal layer (21) of the first-conductivity type, the trench portion being filled with the silicon mixed crystal layer (21) of the first-conductivity type, a substrate region provided between the trench portion and the isolation region (11a, 11b) and made of the semiconductor substrate (10), and an impurity region (22) of the first-conductivity type formed in the substrate region The silicon mixed crystal layer (21) generates stress in a channel region of the active region

Suzuki Ken

Papers

Semiconductor device and method for fabricating the same