Showing papers by "Sven Höfling published in 2023"

On-Chip Hong–Ou–Mandel Interference from Separate Quantum Dot Emitters in an Integrated Circuit

Abstract: Scalable quantum photonic technologies require low-loss integration of many identical single-photon sources with photonic circuitry on a chip. Relatively complex quantum photonic circuits have already been demonstrated; however, sources used so far relied on parametric-down-conversion. Hence, the efficiency and scalability are intrinsically limited by the probabilistic nature of the sources. Quantum emitter-based single-photon sources are free of this limitation, but frequency matching of multiple emitters within a single circuit remains a challenge. In this work, we demonstrate a key component in this regard in the form of a fully monolithic GaAs circuit combing two frequency-matched quantum dot single-photon sources interconnected with a low-loss on-chip beamsplitter connected via single-mode ridge waveguides. This device enabled us to perform a two-photon interference experiment on-chip with visibility reaching 66%, limited by the coherence of the emitters. Our device could be further scaled up, providing a clear path to increase the complexity of quantum circuits toward fully scalable integrated quantum technologies.

Single-Photon Source in a Topological Cavity.

Abstract: The introduction of topological physics into the field of photonics has led to the development of photonic devices endowed with robustness against structural disorder. While a range of platforms have been successfully implemented demonstrating topological protection of light in the classical domain, the implementation of quantum light sources in photonic devices harnessing topologically nontrivial resonances is largely unexplored. Here, we demonstrate a single photon source based on a single semiconductor quantum dot coupled to a topologically nontrivial Su-Schrieffer-Heeger (SSH) cavity mode. We provide an in-depth study of Purcell enhancement for this topological quantum light source and demonstrate its emission of nonclassical light on demand. Our approach is a promising step toward the application of topological cavities in quantum photonics.

Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier

Abstract: Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 $\mu$m. The laser setup consists of a GaSb-based diode laser and a single-stage Er-doped fibre amplifier. Amplification is investigated for continuous wave (CW) and ns-pulsed input signals, generated by gain-modulation of the GaSb-based seed lasers. The experimental results include the demonstration of output powers up to 0.9 W, pulse durations as short as 20 ns, and pulse repetition rates up to 1 MHz. Additionally, the amplification of commercial and custom-made GaSb-based seed lasers is compared and the impact of different fibre end-cap materials on laser performance is analysed.

Monolithic high contrast grating on GaSb/AlAsSb based epitaxial structures for mid-infrared wavelength applications.

Abstract: We demonstrate monolithic high contrast gratings (MHCG) based on GaSb/AlAs0.08Sb0.92 epitaxial structures with sub-wavelength gratings enabling high reflection of unpolarized mid-infrared radiation at the wavelength range from 2.5 to 5 µm. We study the reflectivity wavelength dependence of MHCGs with ridge widths ranging from 220 to 984 nm and fixed 2.6 µm grating period and demonstrate that peak reflectivity of above 0.7 can be shifted from 3.0 to 4.3 µm for ridge widths from 220 to 984 nm, respectively. Maximum reflectivity of up to 0.9 at 4 µm can be achieved. The experiments are in good agreement with numerical simulations, confirming high process flexibility in terms of peak reflectivity and wavelength selection. MHCGs have hitherto been regarded as mirrors enabling high reflection of selected light polarization. With this work, we show that thoughtfully designed MHCG yields high reflectivity for both orthogonal polarizations simultaneously. Our experiment demonstrates that MHCGs are promising candidates to replace conventional mirrors like distributed Bragg reflectors to realize resonator based optical and optoelectronic devices such as resonant cavity enhanced light emitting diodes and resonant cavity enhanced photodetectors in the mid-infrared spectral region, for which epitaxial growth of distributed Bragg reflectors is challenging.

Fabrication of low-loss III-V Bragg-reflectionwaveguides for parametric down-conversion

Abstract: Entangled photon pairs are an important resource for many types of quantum protocols. Semiconductor Bragg-reflection waveguides are a promising photon-pair source due to mature fabrication, integrability, large transparency window in the telecom wavelength range, integration capabilities for electro-optical devices as well as a high second-order nonlinear coefficient. To increase performance, we improved the fabrication of Bragg-reflection waveguides by employing fixed-beam-moving-stage optical lithography, low-pressure, and low chlorine concentration etching, and resist reflow. The reduction in sidewall roughness yields a low optical loss coefficient for telecom wavelength light of α reflow = 0.08 (6) mm −1 . Owing to the decreased losses, we achieved a photon-pair production rate of 8800 (300) (mW · s · mm) −1 , which is 15-fold higher than in previous samples.

Confined-state physics and signs of fermionization of moiré excitons in WSe2/MoSe2 heterobilayers

Abstract: We revisit and extend the standard bosonic interpretation of interlayer excitons (ILX) in the moiré potential of twisted heterostructures of transition-metal dichalcogenides. In our experiments, we probe a high quality MoSe2/WSe2 van der Waals bilayer heterostructure via density-dependent photoluminescence spectroscopy and reveal strongly developed, unconventional spectral shifts of the emergent moiré exciton resonances. The observation of saturating blueshifts of successive exciton resonances allow us to explain their physics in terms of a model utilizing fermionic saturable absorbers. This approach is strongly inspired by established quantum-dot models, which underlines the close analogy of ILX trapped in pockets of the moiré potential, and quantum emitters with discrete eigenstates.