T
T. J. Sumner
Researcher at Imperial College London
Publications - 342
Citations - 18702
T. J. Sumner is an academic researcher from Imperial College London. The author has contributed to research in topics: Dark matter & Xenon. The author has an hindex of 62, co-authored 329 publications receiving 16405 citations. Previous affiliations of T. J. Sumner include University of Rochester & University of Florida.
Papers
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Book ChapterDOI
Deep Surveys and Cosmology
Sebastian Oliver,S. Sergeant,P. Goldschmidt,Robert G. Mann,Michael Rowan-Robinson,N. Eaton,A. Efsathiou,Carlotta Gruppioni,T. J. Sumner,Bahram Mobasher,A. Verma,L. Danese,E. Egami,D. Elbaz,A. Franceschini,I. Gonzalez-Serrano,M. Kontizas,Andy Lawrence,R. G. McMahon,H. U. Nørgaard-Nielsen,I. Pérez-Fournon +20 more
TL;DR: In this article, a survey of the Hubble Deep Field (HDF) is presented, with the main advantages that ISO surveys have over e.g. IRAS are increased sensitivity/depth and wavelength coverage.
Proceedings ArticleDOI
A five-dimensional approach to dark matter and dark energy
Michael B. Gerrard,T. J. Sumner +1 more
Posted Content
Detecting Cosmic Gravitational-wave Background from Super-heavy Cosmic Strings with LISA
Alf Tang,T. J. Sumner +1 more
TL;DR: In this article, the authors developed an algorithm to extract cosmic gravitational-wave background produced by cosmic strings from the LISA data stream, and applied the algorithm to the simulated data stream containing the background produced with various strength to study the detection threshold for this source.
Proceedings ArticleDOI
Implications of carrier mobility limitations for GaAs as an x-ray detector
TL;DR: In this paper, the spectral resolution of gallium arsenide (GaAs) detectors has been investigated using the liquid phase epitaxial (LPE) process and the liquid enhancement Czochralski (LEC) material.
Proceedings ArticleDOI
Performance of milliKelvin Si bolometers as x-ray and exotic particle detectors
TL;DR: In this paper, the design and performance of individual bolometers, using doped layers with a thickness in the range 0.1 to 3 (mu), are described and the use of epitaxial growth to replace ion implantation for improved performance is described.