A review of particle-solid processes pertinent to modelling plasma-wall interactions is presented, and sets of recommended data are given. Analytic formulas are used where possible; otherwise, data are presented in the form of tables and graphs. The incident particles considered are e−, H, D, T, He, C, O, and selfions. The materials include the metals aluminum, beryllium, copper, molybdenum, stainless steel, titanium, and tungsten and the nonmetals carbon and TiC. The processes covered are light ion reflection, hydrogen and helium trapping and detrapping, desorption, evaporation, sputtering, chemical effects in sputtering, blistering caused by implantation of helium and hydrogen, secondary electron emission by electrons and particles, and arcing.

Data Compendium for Plasma-Surface Interactions

Ion-beam studies of hydrogen-metal interactions

Development of surface topography due to gas ion implantation

Blistering of the selected materials irradiated by intense 200keV proton beam

A study has been made of d+ ion implantation in Si(111) at 100 K and 300 K. Deuterium depth profiles as a function of fluence were obtained using a method based on observing the energy spectra of the tritons and protons from the D(d, p)T reaction induced with a deuteron beam. Profiles at 300 K show two distinct regions in the target. For a fluence of 4 × 1015 d+/cm2 the surface region which extends over the first half of the deuteron range contains little deuterium (∼ 0.3 atomic %) while a relatively large amount (∼ 5 at. %) is retained in a buried layer. Typical scanning electron micrographs taken following implantation are presented. They show the deeper layers to be highly damaged. In striking contrast, the surface region shows little observable damage even for doses exceeding 1019d+/cm2. Deuterium diffusion coefficients are estimated for silicon under irradiation conditions.

T.R. Armstrong

Papers

The onset of radiation blistering as a function of target temperature for D+ irradiated copper

The onset of radiation-blistering in low-temperature D+-irradiated copper

The formation of a ring of blisters in copper irradiated at 120 K: A stress-related phenomenon?

Deuterium implantation in graphite