The invention is a method of improving a mechanically prepared surface of alpha silicon carbide for increasing the polytype purity of an epitaxial layer of beta silicon carbide grown thereon. The method comprises decreasing the frequency of exposed higher energy lattice positions along a mechanically prepared {0001} surface of a 6H alpha silicon carbide substrate by adding atoms to vacant lattice positions and by increasing the average height and separation between steps on a mechanically prepared {0001} surface of 6H silicon carbide.

Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties

Silicon carbide with its outstanding physical properties is a material of choice for special optoelectronic and electronic devices working under extreme conditions. Synthesis as well as processing are complicated compared to other materials. The present paper summarizes some aspects of crystal growth and processing and discusses arising problems.

Tadashi Mihara

Papers

MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junction