Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Semiconductor processing system and methods using capacitively coupled plasma

An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

Semiconductor processing systems having multiple plasma configurations

A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Methods for etch of metal and metal-oxide films

A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Methods for etch of sin films

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Processing systems and methods for halide scavenging

There are included steps of forming a silicon nitride layer on a silicon layer or a silicon oxide layer, loading the silicon layer or the silicon oxide layer and the silicon nitride layer in a dry etching atmosphere, and selectively etching the silicon nitride layer with respect to the silicon layer or the silicon oxide layer by flowing a fluorine gas consisting of any one of CH 2 F 2 , CH 3 F, or CHF 3 and an inert gas to the dry etching atmosphere Hence, in the etching process of the silicon nitride layer, the etching selectivity of the silicon nitride layer to Si or SiO 2 can be enhanced and also etching anisotropy can be enhanced

Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas

A gate electrode conductive film is formed on the surface of a semiconductor substrate. First and second gate mask patterns made of a first insulating material are formed on the gate electrode conductive film on first and second sections. Sidewall spacers are formed on the sidewalls of the first and second gate mask patterns, the sidewall spacer being made of a second insulating material having an etching resistance different from the first insulating material. The second section is covered with a mask pattern and the sidewall spacer on the sidewall of the first gate mask pattern is removed. The gate electrode conductive film is etched to leave first and second gate electrodes on the first and second sections.

Semiconductor device with two types of FET's having different gate lengths and its manufacture method

A manufacturing method of an electronic device, includes the steps of: implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask; ashing the resist while it is heated in a vacuum environment; and taking out the substrate, the substrate being ashing processed so that a temperature of the substrate is equal to or less than 130° C

Manufacturing method of electronic device

After a liquid chemical treatment is finished, in parallel with a washing away treatment and/or a drying treatment, by spraying from a nozzle for a cleaning liquid supplied by a cleaning line to an outer surface of a nozzle for a liquid chemical, crystals and the like of components of the liquid chemical adhered on the outer surface of the nozzle are removed. In the cleaning treatment, a spraying time of the cleaning liquid is five seconds to ten seconds. In addition, the components of the cleaning liquid is not specifically limited, however, since ammonium phosphate tends to be solved in purified water, if a liquid chemical containing ammonium phosphate is used, it is preferable to use purified water as the cleaning liquid. Depending on the components and the like of the liquid chemical, a solution that can solve the crystals and the like may be used in stead.

Cleaning apparatus of semiconductor substrate and method of manufacturing semiconductor device

A manufacturing method of an electronic device, includes the steps of: implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask; ashing the resist while it is heated in a vacuum environment; and taking out the substrate, the substrate being ashing processed so that a temperature of the substrate is equal to or less than 130° C.

Tadashi Oshima

Papers

Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas

Semiconductor device with two types of FET's having different gate lengths and its manufacture method

Manufacturing method of electronic device

Cleaning apparatus of semiconductor substrate and method of manufacturing semiconductor device

Manufacturing method of electronic device with resist ashing