Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Semiconductor reaction chamber showerhead

A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

Semiconductor processing reactor and components thereof

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same

A process and device enabling accurate mass flow control is described. A mass flow controller can be re-specified corresponding to multiple types of actual process gases and multiple flow rate ranges, even after the mass flow controller has been shipped. Calibration gas data is derived using actual flow rate versus a flow rate setting signal to generate calibration gas data. Actual gas data is derived by measuring actual flow rate versus a flow rate setting signal for each actual gas and saving. Subsequently, prior to operating the mass flow rate control device, the characteristic data for an actual and the calibration gas characteristic data is recalled. The calibration gas characteristic data is then converted to controlled flow rate correction data based on the actual gas characteristic data that is saved to the control unit and the actual gas flow rate is corrected based on this controlled flow rate correction data.

Flow rate control using mass flow rate control device

A method for calibrating a mass flow controller comprising a calibrating valve disposed on the most upstream side of a path, a mass flow rate control valve mechanism, a tank provided at the path on the upstream side of the mass flow rate control valve mechanism, a mass-flow-rate-sensing means, a pressure-sensing means, a means for controlling the mass flow rate control valve mechanism, and a mass flow rate calibration control means, the method comprising the steps of (1) permitting a fluid at a set mass flow rate to flow through the path, (2) setting the mass flow rate control valve mechanism at a degree of opening that the mass flow rate of the fluid is equal to the set mass flow rate, (3) closing the calibrating valve, (4) measuring the pressure and mass flow rate of the fluid after a fluid flow from the tank is stabilized, (5) determining a variation ratio of the pressure and mass flow rate to reference pressure and mass flow rate measured by the same procedures in an initial state, and (6) performing calibration depending on the variation ratio.

Mass flow rate control apparatus, its calibration method and semiconductor-producing apparatus

After a product (mass flow controller) is shipped, the specifications of the mass flow controller adapted to multiple types of gas in actual use and multiple flow ranges can be altered. In the initial state of the mass flow controller, calibration gas characteristic data is collected by measuring the actual flow in response to a flow setting signal by using a calibration gas and stored in control means. Actual gas characteristic data is collected by measuring the actual flow in response to a flow setting signal by using each of multiple types of actual gas and stored in a storage medium. Before the mass flow controller is operated, the actual gas characteristic data on the actual gas to be used is read through a computer from the storage medium and the calibration gas characteristic data stored in the control means is read. With reference to the actual gas characteristic data, the calibration gas characteristic data is converted into control flow correction data. The control flow correction data is written in the control means. The actual gas flow is corrected on the basis of the control flow correction data.

Flow control using mass flow controller

PROBLEM TO BE SOLVED: To provide a flow rate control device capable of examining accuracy in flow rate control of fluid flowing through a channel during operation of semiconductor manufacturing equipment, and the like. SOLUTION: The device is equipped with a control means 8 to output valve drive control information to flow rate control valve mechanism 7 so that the flow rate of a channel 4 becomes the flow rate set value, a flow rate detection means 5 to detect the flow rate of the fluid, and a pressure detection means 6 to detect the pressure of the fluid. The control means 8 is beforehand equipped with the valve characteristic information K in which, when the valve drive control information is outputted to the flow rate control valve mechanism 7, the information indicating relation between the outputted valve drive control information and the flow rate of the channel is stored in association with the pressure of the fluid of the channel. The valve drive control information, as a criteria to be associated with the flow rate set value and the pressure value detected by the pressure detection means 6 during the control of the flow rate is acquired referring to the valve characteristic information K, and the amount of difference between this acquired valve drive control information and the valve drive control information outputted to the flow rate control valve mechanism 7 by the control means 8 is made as the examination information for the flow rate control. COPYRIGHT: (C)2009,JPO&INPIT

Flow rate control device, flow rate control method and examination method for flow rate control device

PROBLEM TO BE SOLVED: To provide mass flow rate controller which enables high-accuracy assay by reflecting both pressure and mass flow and also allowing for variation in tank volume. SOLUTION: This is the method for assay of the mass flow rate controller which comprises a valve for assay 42 installed in utmost upstream of channel 6, mass flow rate control valve mechanism 10; tank 44 mounted on the channel 6 of upstream from the mass flow rate control valve mechanism 10; mass flow detecting means 8, pressure detecting means 46, means 18 for controlling the mass flow rate control valve mechanism 10, and mass flow rate assay control means 48. The method includes (1) streaming the fluid of a defined mass flow rate to the channel 6, (2) for maintain opening of the mass flow rate control valve mechanism 10 so as to match the mass flow of the fluid with the defined mass flow; (3) closing the valve for assay 42, (4) for measuring pressure and mass flow rate of the fluid after flow of the fluid running out from the tank 44 is stabilized; (5) calculating the rate of change in pressure and mass flow rate with respect to the reference pressure and mass flow measured by the same procedure in the initial state, and then (6) conduct assay, depending on the rate of change. COPYRIGHT: (C)2008,JPO&INPIT

Takao Goto

Papers

Flow rate control using mass flow rate control device

Mass flow rate control apparatus, its calibration method and semiconductor-producing apparatus

Flow control using mass flow controller

Flow rate control device, flow rate control method and examination method for flow rate control device

Mass flow rate controller, assay method therefor, and semiconductor manufacturing equipment