Takashi Mihara

TL;DR: Ferroelectric thin films of bismuth layer structured compounds, such as SrBi2Ta2O9, SrBiNb2O 9 and SrBi4Ti4O15, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films as mentioned in this paper.

TL;DR: In this article, a series of thin-film bismuth layer structured ferroelectric (BLSF) materials such as SrBi2Ta2O9, SrBiNb2O 9, and SrBi4Ti4O15 were developed using metallo-organic-decomposition (MOD) spin-on coating techniques.

TL;DR: In this article, a plausible fatigue model is proposed in which injected charge initiates the polarization fatigue, and the degradation is explained in terms of an electric field activating process with an accelerating factor of 1.2×10-3 in units of decade kV/cm on PZT thin-film capacitors.

TL;DR: In this paper, a liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material, which is formed in two layers, the first layer using a stoichiometric precursor and the second layer using an excess bismuth precursor.

TL;DR: In this paper, the fatigue characteristics of sol-gel ferroelectric Pb(Zr0.4Ti0.6)O3 capacitors measuring hysteresis loops, time-zero current voltage characteristics and the dielectric constant after polarization switching were investigated.