An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes.

Semiconductor display device

There are disposed two homogenizers for controlling an irradiation energy density in the longitudinal direction of a laser light transformed into a linear one which is inputtted into the surface to be irradiated. Also, there is disposed one homogenizer for controlling an irradiation energy density in a width direction of the linear laser light. According to this, the uniformity of laser annealing can be improved by the minimum number of homogenizers.

Laser irradiation apparatus

Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.

Crystallization processing of semiconductor film regions on a substrate, and devices made therewith

It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.

Laser irradiation apparatus and laser irradiation method

A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350° C. to 500° C., more preferably 350° C. to 450° C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm2 to 500 mJ/cm2, preferably 280 mJ/cm2 to 330 mJ/cm2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.

Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation

Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof

Herstellungsverfahren von einer Polysiliziumschicht und Oberflächenbehandlungsvorrichtung dafür.

A laser light emitting surface treatment apparatus comprises a laser oscillator, a scanning laser light generating means and an irradiation chamber It is apt to perform an annealing treatment, where the area of irradiation by a single shot of laser light is large and the energy density of the laser light is high An attenuator is provided in the optical path of the laser light emitted from the laser oscillator, the scanning laser light emitted from the laser oscillator, the scanning laser light generating means is positioned in the laser light passing through the attenuator and a beam homogenizer is provided in the laser light from the scanning laser light generating means

Takashi Noguchi

Papers

Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation

Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof

Herstellungsverfahren von einer Polysiliziumschicht und Oberflächenbehandlungsvorrichtung dafür.

Surface treatment apparatus