Showing papers by "Takashi Sugiura published in 2012"
TL;DR: In this paper, a method to synthesize indium nitride (InN) crystal by the reaction of InCl3 with LiNH2 under N2 atmosphere was studied.
Abstract: A method to synthesize indium nitride (InN) crystal by the reaction of InCl3 with LiNH2 under N2 atmosphere was studied. InN was formed at the temperature ranging from 350 to 450°C under 0.1 MPa N2 atmosphere. X-ray diffraction (XRD) pattern and transmission electron microscope (TEM) image indicated that synthesized InN was crystalline powder with a wurtzite structure. Band gap was determined by plotting (αhν)2 vs. hν for direct transition and the value of 0.83 eV was obtained.
4 citations