An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.

Substrate processing method

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.

Substrate processing method and substrate processing apparatus

A substrate treatment system comprises process sections provided with at least either of liquid treatment group units and heat treatment group units, an upper space formed above the process sections in order to supply air to the process sections, a purification section for removing alkaline components from the air to be supplied to the upper spaces to purify the air, temperature/humidity controller communicating with the urification section and the upper spaces to control the temperature and humidity of the air passing through the purification sections, and fans for supplying air to the top spaces from the temperature/humidity controller, lowering the air from the upper spaces into the process sections, and supplying at least some of the air lowering through the process sections to the temperature/humidity controller.

Substrate treatment system

A processing apparatus using solution comprises a rotary table which rotates while holding a substrate thereon, in the processing chamber provided in the casing, a supply mechanism for supplying a processing solution to a surface of the substrate held on the rotary table, and an impurity remover unit, provided outside the casing, wherein the impurity remover unit includes a cleaning unit for cleaning an object gas introduced from the inlet opening by brining it into contact with an impurity remover solution, and the gas-liquid separation mechanism for separating liquid from gas in an exhaust is provided in the exhaust system for exhausting the casing.

Processing apparatus and method using solution

A processing apparatus comprises a plurality of process unit groups each including a plurality of process units for subjecting an object to a series of processes, the process units being arranged vertically in multiple stages, an object transfer space being defined among the process unit groups, and a transfer mechanism for transferring the object, the transfer mechanism having a transfer member vertically movable in the object transfer space, the transfer member being capable of transferring the object to each of the process units. The processing apparatus further comprises a mechanism for forming a downward air flow in the object transfer space, a mechanism for controlling the quantity of the downward air flow, and a mechanism for controlling the pressure in the object transfer space. Thus, a variation in condition of the object transfer space is reduced.

Vertical processing apparatus

PROBLEM TO BE SOLVED: To suppress air turbulence generated by a wafer moving vertically in a wafer processing apparatus. SOLUTION: Wafer conveying means is equipped with an arm unit comprising a pair of arms for supporting a wafer, which can open and close and move back and fourth, a rotation unit for rotating the arm unit horizontally about an axis, and an elevating mechanism for moving the rotation unit vertically. The arm unit is equipped with a first support section constructed such that the wafer can be supported by a recess into which the peripheral portion of the wafer is inserted and a second support section which is formed below the first support section, holds the lower surface of the wafer and regulates the position of the peripheral portion of the wafer. The wafer is supported by the first support section in a vertical attitude when the wafer is moved vertically. When the wafer is passed over, the wafer is placed in the horizontal attitude. After the arms are opened, the wafer supported by the first support section is lowered to the second support section by its dead weight and supported by the second support section.

Takayuki Katano

Papers

Substrate processing method and substrate processing apparatus

Substrate treatment system

Processing apparatus and method using solution

Vertical processing apparatus

Wafer processing apparatus