A direct current and a modulation signal are simultaneously applied to contact pads on a device under test, such as a laser diode, with a probe that reduces signal distortion and power dissipation by transmitting a modulated signal through an impedance matching resistor and transmitting of a direct current over a second signal path that avoids the impedance matching resistor.

Probe for combined signals

A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Probe for testing a device under test

A probe suitable for probing a semiconductor wafer that includes an active circuit. The probe may include a flexible interconnection between the active circuit and a support structure. The probe may impose a relatively low capacitance on the device under test.

Active wafer probe

A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal path and the probe tip.

Shielded probe for testing a device under test

A system that includes an imaging device for effectively positioning a probe for testing a semiconductor.

System for testing semiconductors

An improved instrument measures noise power generated by a transistor under selected test conditions. Automatic adjustment of gain from the input of the transistor under test through succeeding stages provides an accurate readout of noise generated within the transistor under test.

Takayuki Sato

Papers

Transistor noise measuring apparatus