The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

The present disclosure relates to a semiconductor light-emitting element, which comprises: a first light-emitting part, a second light-emitting part, and a third light-emitting part, wherein each of the light-emitting parts includes multiple semiconductor layers including a first semiconductor layer, an active layer, and a second semiconductor layer, laminated in sequence, the first semiconductor layer having a first conductivity, the active layer generating light through the recombination of an electron and a hole, and the second semiconductor layer having a second conductivity different from the first conductivity; a non-conductive reflecting film which is formed to cover the multiple semiconductor layers and reflects light generated from the active layer; a first electrode which is provided to electrically communicate with the first semiconductor layer of the first light-emitting part and which supplies one of an electron and a hole; a second electrode which is provided to electrically communicate with the second semiconductor layer of the second light-emitting part and which supplies the other of the electron and the hole; and an auxiliary pad formed on the non-conductive reflecting film which covers the third light-emitting part.

Semiconductor light emitting element

Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

Semiconductor light emitting device and method for manufacturing the same

PROBLEM TO BE SOLVED: To provide a new semiconductor laser device which is capable of outputting two or more laser beams adjusting their intensity separately. SOLUTION: The semiconductor laser device of this invention is equipped with a semiconductor multilayer film containing an active layer 24, and a first and a second electrode which are used for injecting a current into the active layer 24 to emit laser beams 61 to 64. The active layer 24 is equipped with end surfaces 24a to 24d. The end surfaces 24a to 24d are each located at the four apexes of a virtual diamond-shaped route 32. Laser beams (L1/L2) propagating clockwise and counterclockwise through the route 32 are partially emitted as the laser beams 61 to 64. The first and second electrode are formed so as to inject electric currents, which are different from each other in intensity, into the parts of the active layer 24 which are corresponding to the diamond-shaped route 32 and divided by the diagonal lines of the diamond-shaped route 32. The currents which are injected into the parts of the active layer 24, are changed in intensity, whereby the intensity of the laser beams 61 to 64 are controlled. COPYRIGHT: (C)2008,JPO&INPIT

Semiconductor laser device

A light-emitting diode and a method of manufacturing the light-emitting diode are provide, the light-emitting diode including a lower electrode on a substrate, a template layer on the lower electrode. The template layer may have a plurality of open regions. A plurality of nano-dashes may be formed in the plurality of open regions of the template layer. A transparent insulating layer may be formed between the nano-dashes. A transparent upper electrode may be formed on the nano-dashes and the transparent insulating layer.

Light emitting diode and method of manufacturing the same

A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100 ) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40 ), coupling means (optical waveguides 41 and 42 ) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.

Laser gyro and electronic device using the same

PROBLEM TO BE SOLVED: To provide a new semiconductor laser gyro using a semiconductor laser of a new structure. SOLUTION: A semiconductor laser gyro is provided with a semiconductor laser emitting a first and second laser beams and an optical detector. The optical detector is arranged at a position at which interference patterns are formed by the first and second laser beams. The semiconductor laser 10 is provided with a substrate 11, an active layer 24 stacked on the substrate 11, a first and second clad layers 22 and 26 that are arranged in such a manner as to pinch the active layer 24, and an electrode for injecting carriers to the active layer 24. The first laser beam is the emitted part of the laser beam (L1) rounding on a polygonal path in the active layer 24, and the second laser beam is the emitted part of the laser beam (L2) rounding in the reverse direction to the laser beam (L1) on the path. The clad layers 22 and 26 comprise a material with a refractive index lower than that of the active layer 24, and they have a thickness of 2 μm or larger. COPYRIGHT: (C)2006,JPO&NCIPI

Semiconductor laser gyro

PROBLEM TO BE SOLVED: To provide an optical gyro having a simple structure, concerning the optical gyro capable of detecting a rotation angular speed of a rotator and a gyro system using it. SOLUTION: A semiconductor optical amplifier (SOA) 1 oscillates laser light CW, CCW, amplifies the laser light CW, CCW by induced emission, and radiates the laser light CW, CCW respectively from end faces 1A, 1B into an optical fiber 2. A coupler 3 splits the laser light CW, CCW in the optical fiber 2 at the ratio of 99%:1% into an optical fiber 4. The coupler 3 overlaps the laser light CW, CCW in the optical fiber 4 at the ratio of 50%:50% into an optical fiber 6. A photodetector 7 performs square detection of overlapped light in the optical fiber 6 and generates a beat signal, and a spectrum analyzer 8 detects the frequency f B of the beat signal. In this case, the frequency f B is changed relative to the rotation angular speed. A detector 9 detects each rotation angular speed of the semiconductor optical amplifier 1 and the optical fiber 2 based on the frequency f B . COPYRIGHT: (C)2007,JPO&INPIT

Optical gyro and gyro system using it

A semiconductor laser gyro comprising a semiconductor laser (10) emitting first and second laser lights and a photodetector which is located at such a position that interference fringes are formed by the first and second laser lights. The semiconductor laser (10) comprises an active layer, and first and second electrodes (13, 14) for injecting carriers into the active layer. The first laser light is a part of laser light (L1) circulating on a polygonal passage in the active layer, and the second laser light is a part of laser light (L2) circulating on that passage reversely to the first laser light (L1).

Takehiro Fukushima

Papers

Semiconductor laser device

Laser gyro and electronic device using the same

Semiconductor laser gyro

Optical gyro and gyro system using it

Gyro employing semiconductor laser