The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Semiconductor device, manufacturing method thereof, and electronic device

Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.

Field effect transistor, logic circuit including the same and methods of manufacturing the same

In a miniaturized complete CMOS SRAM of a TFT load type, a field effect thin-film transistor (TFT) can achieve stable reading and writing operation of a memory cell and can reduce power consumption thereof. The field effect thin-film transistor formed on an insulator includes an active layer and a gate electrode. The gate electrode is formed on a channel region of the active layer with a gate insulating film therebetween. The active layer is formed of a channel region and source/drain regions. The channel region is formed of a monocrystal silicon layer and does not includes a grain boundary. The source/drain regions is formed of a polysilicon layer. The channel region has a density of crystal defects of less than 109 pieces/cm2. The thin film transistor shows an ON current of 0.25 μA/μm per channel width of 1 μm and an OFF current of 15 fA/μm. The thin-film transistor can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.

Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same

In a miniaturized complete CMOS SRAM of a TFT load type, a field effect thin-film transistor (TFT) can achieve stable reading and writing operation of a memory cell and can reduce power consumption thereof. The field effect thin-film transistor formed on an insulator includes an active layer and a gate electrode. The gate electrode is formed on a channel region of the active layer with a gate insulating film therebetween. The active layer is formed of a channel region and source/drain regions. The channel region is formed of a monocrystal silicon layer and does not includes a grain boundary. The source/drain regions is formed of a polysilicon layer. The channel region has a density of crystal defects of less than 10 9 pieces/cm 2 . The thin film transistor shows an ON current of 0.25 μA/μm per channel width of 1 μm and an OFF current of 15 fA/μm. The thin-film transistor can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.

Field effect thin-film transistor for an SRAM with reduced standby current

A drum type washing machine is provided. The drum type washing machine may include a cabinet, a tub fixed to an inner side of the cabinet, a drum rotatably arranged in the tub, and a driving motor positioned at a rear side of the drum for generating a driving force that rotates the drum. The washing machine may also include a supporting plate to rotatably support a rotational shaft extending between the motor and the drum, and a plurality of supporters connected between the supporting plate and the cabinet. Such an arrangement may increase washing capacity by increasing a diameter of the drum without increasing an external size of the cabinet.

Drum-type washing machine

A thin film transistor (TFT) capable of reducing the leakage current on the occasion when the transistor is OFF and lowering the resistance of an interconnection layer connected to source/drain regions and a method of manufacturing the same are disclosed. In the thin film transistor, the length in the channel width direction of a polycrystalline silicon film 15 in junction parts 15c of a pair of source/drain regions 15b and a channel region 15a is smaller than the length in the channel width direction of polycrystalline silicon film 15 in source/drain regions 15b. Accordingly, the leakage current generated in junction parts 15c on the occasion when the TFT is OFF is reduced. In addition, it is unnecessary to reduce the length in the channel width direction of source/drain regions 15b, so that the resistance of an interconnection layer connected to source/drain regions 15b is lowered as compared to the conventional one.

Thin film transistor with reduced leakage current

PURPOSE:To reduce leak current at the time of OFF, and decrease the resistance of a wiring layer connected with a source/drain region, by making the length in the channel width direction of a junction part of a pair of source/drain regions with a channel region shorter than the length in the width direction of the source/drain region CONSTITUTION:The title transistor is provided with the following; a channel region 15a formed in a specified region of a thin semiconductor layer, so as to face a gate electrode 13 via a gate insulating film, and a pair of source/drain regions 15b formed in the thin semiconductor layer so as to sandwich the channel region 15a In the above thin film transistor, the length w1 in the channel width direction of a junction part 15c of a pair of the source/drain regions 15b with the channel region 15a is made smaller than the length w0 in the channel width direction of the semiconductor layer of the source/drain region 15b For example, the thickness t1 of the semiconductor layer of the channel region 15a us also made smaller than the thickness t0 of the semiconductor layer of the source/drain region 15b

Takeo Muragishi

Papers

Thin film transistor with reduced leakage current

Thin film transistor and its manufacture

Thin film transistor and manufacturing method thereof

Thin film transistor & manufacturing method thereof