Showing papers by "Tetsu Kachi published in 2015"
TL;DR: In this article, a gate drive circuit for the GaN-based high-electron-mobility transistor (GaN HEMT) for power electronic converters was proposed.
Abstract: Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are promising materials for next-generation power devices. We have fabricated a normally on GaN-based high-electron-mobility transistor (GaN HEMT) for power electronic converters. In this paper, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail for several voltages with two switching frequencies. We also evaluate a gate drive circuit that we previously proposed for the normally on GaN HEMT with a single positive voltage source. We construct and test prototype circuits for a boost-type dc–dc converter and a single-phase full-bridge inverter with a gate drive circuit. The problems to be solved for the normally on GaN HEMT, which has a (static) voltage rating of over 600 V, are clarified on the basis of the experimental results.
39 citations
01 Dec 2015
TL;DR: In this paper, the authors reviewed the recent progress and developing issues of GaN vertical power devices and proposed a GaN-based vertical power device with 2kV level pn diodes and 1.5kV transistors.
Abstract: Recent progress and developing issues of GaN vertical power devices are reviewed. Quality improvement of GaN substrates activates the research. 2kV level pn diodes and 1.5kV level vertical transistors have been reported recently. However, some issues to be solved still exist to show high ability of GaN.
10 citations