An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

PROBLEM TO BE SOLVED: To provide a pixel circuit capable of canceling the influence of mobility of a drive transistor. SOLUTION: The drive transistor Trd supplies an output current to a light emitting element EL according to an input voltage Vgs for a predetermined light emitting period. The light emitting element EL emit light with brightness proportional to a video signal by the output current supplied from the drive transistor Trd. To offset dependency on the carrier mobility of the output current, the pixel circuit is provided with a correction means for correcting the input voltage Vgs pre-held by a capacitive part Cs before or at the head of the light emitting period. This correction means operates in a part of a sampling period according to the control signals supplied from scanning lines DS, WS, AZ1, and AZ2, and takes out the output current from the drive transistor Trd in the state in which the video signal is being sampled, and negatively feeds back the output current to the capacitive part Cs to correct the input voltage Vgs. COPYRIGHT: (C)2006,JPO&NCIPI

Pixel circuit, display device, and driving method therefor

PROBLEM TO BE SOLVED: To reduce the number of constituting elements in a pixel circuit added with a compensation function with respect to fluctuations in the characteristics of electro-optical elements and fluctuations in the threshold voltages of transistors. SOLUTION: The pixel circuit 101 comprises five n channel thin-film transistors, each composed of the electro-optical element 117, one holding capacitor C 111, a sampling transistor 115, a drive transistor 111, a switching transistor 112, a first detection transistor 114, and a second detection transistor 113. The sampling transistor 115 samples the input signal from a signal line and holds the signal in the holding capacitor C 111. The drive transistor 111 drives the electro-optical element 117 with a current, according to the held signal potential. The first and second detection transistors 114 and 113 detect the threshold voltage of the transistor 111 and hold the detected potential in the holding capacitor C 111, in order to cancel the influence thereof, in advance. COPYRIGHT: (C)2006,JPO&NCIPI

Pixel circuit, active matrix system, and display device

PROBLEM TO BE SOLVED: To provide a pixel circuit which can perform source-follower output free of deterioration in luminance in spite of a change in the current-voltage characteristics of a light emitting element with lapse of time, makes a source-follower circuit of an (n) channel transistor (TR) possible and makes the (n) channel TR usable as a driving element for an electrooptical element, a display device, and a method for driving the pixel circuit. SOLUTION: A capacitor C 111 is connected between the gate and source of a TFT 111 as a drive TR and the source side of the TFT 111 is connected to a fixed potential (for example, GND) through a TFT 114. Also the cancellation of the threshold Vth is performed by connecting the gate and drain of the TFT 111 to each other through a TFT 113. The threshold Vth is charged in the capacitor C 111 and the input voltage Vin is coupled to the gate of the TFT 111 from the threshold Vth. COPYRIGHT: (C)2005,JPO&NCIPI

Pixel circuit, display device and driving method for pixel circuit

PROBLEM TO BE SOLVED: To provide a pixel circuit capable of compensating a secular change of a drain current of a drive transistor. SOLUTION: A sampling transistor Tr1 samples an input signal Vsig and holds it to holding capacitance C1. A driving transistor Tr2 supplies driving current Ids to a light emitting element EL according to the signal potential held to the holding capacitance C1. The pixel circuit is provided with a compensating circuit 7 to compensate for fall-off of the driving current Ids accompanied by the aging of the driving transistor Tr2. To detect the fall-off of the driving current Ids from the output node B side and feed back the result to an input node A side, the compensating circuit 7 includes a detection means for accumulating the electric charges transferred by the driving current Ids for a fixed period of time and outputting a detection potential according to a quantity of the accumulated electric charges; and a feedback means for comparing the input signal Vsig level with the detected potential level to obtain a difference and adding a potential according to the difference to the signal potential held to the holding capacitance C1. COPYRIGHT: (C)2006,JPO&NCIPI

Pixel circuit and display device, and driving methods therefor

PROBLEM TO BE SOLVED: To provide a display device capable of suppressing unevenness of light emitting brightness between pixels, accompanying simplification of a pixel circuit. SOLUTION: A scanner for control 104 makes a sampling transistor Trs conductive in a time band, when a signal line DTL1 is on a reference potential and applies the reference potential on a gate g of a driving transistor Trd, and sets low potential to a source s of the drive transistor Trd from a supply line DSL1. Then, a power source scanner 105 changes the supply line DSL1 from low potential to high potential, and writes a voltage, corresponding to a threshold voltage Vth of the driving transistor Trd in a holding capacitor Cs. At this time, the reference potential of the signal line DTL1 and the low potential of the supply line are set beforehand so that source potential of the drive transistor Trd, just before the emission start of the light-emitting element EL does not exceed the threshold voltage of the light-emitting element EL. COPYRIGHT: (C)2008,JPO&INPIT

Tetsuo Yamamoto

Papers

Pixel circuit, display device, and driving method therefor

Pixel circuit, active matrix system, and display device

Pixel circuit, display device and driving method for pixel circuit

Pixel circuit and display device, and driving methods therefor

Display device and method of driving the same