Tetsuya Homma

TL;DR: Spectral interference between a white-light continuum generated in a hollow-fiber and its second harmonic is demonstrated and shot-by-shot changes of the carrier-envelope phase are estimated.

TL;DR: In this article, a method of fabricating a multi-layered interconnection structure which comprises the steps of: forming a first wiring layer on a silicon oxide film having a compressive stress; forming a thick (2 to 3.5 μm) fluorine-containing silicon dioxide film at a temperature not higher than 200 ° C; etching back the fluorine containing silicon oxide material to flatten the surface of the film; and forming a silicon oxide film having an insulating film, a resistance to cracking, flatness and reliability are improved.

TL;DR: In this paper, a chemical vapor deposition method for forming a fluorine-containing silicon oxide film was proposed, which involves introducing a gaseous mixture of alkoxysilane or its polymers as a source gas with fluoroalkoxysilicane added thereto into a reaction chamber and performing decomposition of the gaseusous mixture to deposit the fluorine containing silicon oxide on a substrate.

TL;DR: In this paper, a silicon oxide film containing fluorine is formed at a temperature of 200° C. or less in a reaction chamber having a predetermined temperature and a predetermined pressure.

TL;DR: In this article, a method of manufacturing a semiconductor device, incorporating the steps of: performing reactive ion etching using a fluorine compound gas to surface-treat the lower level wirings which permits selective deposition of the second silicon oxide film, selectively depositing a second silicone oxide film between said lower level Wirings by a CVD method using an organic silicon compound gas and an oxidizable gas as source gases, depositing an entire surface and forming through holes connected to the lower Wiring; and forming upper level WIRings connected with the lower-level