Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.

Semiconductor devices and methods of manufacturing the same

A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride, the polishing liquid having a pH of 1.5 to 7.0, including (1) colloidal silica particles, (2) an organic acid, and (3) an anionic surfactant, and being capable of selectively polishing the second layer with respect to the first layer.

Polishing liquid and polishing method

Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

FORMATION OF SiOCN THIN FILMS

The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12 The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm The abrasive grains contained in the polishing composition are preferably colloidal silica The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm The content of the abrasive grains in the polishing composition is preferably 10 to 50% by mass

Polishing composition and polishing method using the same

In order to make a thermoelectric device usable in a high temperature environment of 300° C. or above, the necessity for solder is eliminated by bonding each electrode of a second substrate to one end of each thermoelectric element by using gold. Further, a conductive member, capable of accommodating expansion and contraction of the thermoelectric elements, is provided between each electrode of a first substrate, on which bonding by gold is not performed, and the other end of each thermoelectric element. Additionally, a lid is placed outside to the second substrate, and the lid and the first substrate are coupled so that pressure can be applied between the first and second substrates. Thus, the second substrate, the electrodes and the thermoelectric elements are held. This prevents the thermoelectric elements from being damaged due to thermal deformation as in the case where electrodes are bonded to thermoelectric elements by solder.

Thermoelectric device and method of manufacturing the same

The present invention provides a polishing liquid for polishing a ruthenium-containing barrier layer, the polishing liquid being used in chemical mechanical polishing for a semi-conductor device having a ruthenium-containing barrier layer and conductive metal wiring lines on a surface thereof, the polishing liquid comprising an oxidizing agent; and a polishing particulate having hardness of 5 or higher on the Mohs scale and having a composition in which a main component is other than silicon dioxide (SiO 2 ). The present invention also provides a polishing method for chemical mechanical polishing of a semi-conductor device, the method contacting the polishing liquid with the surface of a substrate to be polished, and polishing the surface to be polished such that contacting pressure from a polishing pad to the surface to be polished is from 0.69 kPa to 20.68 kPa.

Polishing liquid and polishing method using the same

A barrier polishing liquid is provided that includes (a) a nonionic surfactant represented by Formula (I) below, (b) at least one type of organic acid selected from the group consisting of an aromatic sulfonic acid, an aromatic carboxylic acid, and a derivative thereof, (c) colloidal silica, and (d) benzotriazole or a derivative thereof. (In Formula (I), R 1 to R 6 independently denote a hydrogen atom or an alkyl group having 1 to 10 carbons, X and Y independently denote an ethyleneoxy group or a propyleneoxy group, and m and n independently denote an integer of 0 to 20.) There is also provided a chemical mechanical polishing method that includes supplying the barrier polishing liquid to a polishing pad on a polishing platen at a flow rate per unit area of a semiconductor substrate per unit time of 0.035 to 0.25 mL/(min·cm 2 ), and polishing by making the polishing pad and a surface to be polished move relative to each other while they are in a contacted state.

Barrier polishing liquid and chemical mechanical polishing method

This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

Novel Etching Composition

A silicon nitride polishing liquid for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing silicon nitride and a second layer containing at least one silicon-including material selected from the group consisting of polysilicon, modified polysilicon, silicon oxide, silicon carbide, and silicon oxycarbide, the silicon nitride polishing liquid having a pH of 2.5 to 5.0, and including (a) colloidal silica, (b) an organic acid that has at least one sulfonic acid group or phosphonic acid group in the molecular structure thereof and functions as a polishing accelerator for silicon nitride, and (c) water.

Tetsuya Kamimura

Papers

Polishing liquid and polishing method

Polishing liquid and polishing method using the same

Barrier polishing liquid and chemical mechanical polishing method

Novel Etching Composition

Silicon nitride polishing liquid and polishing method