Process and device structures for constructing RFID tag and smart card and toy controller integrated circuit transceivers built inexpensively using flat panel display manufacturing machines on large plastic or glass or plastic laminated to glass substrates using thin film technologies at low temperatures and using chemicals and gases which will not attack or damage the substrate. Also disclosed are structures to eliminate the reliability problems caused by differential strain caused by different coefficients of thermal expansion.

Inexpensive, reliable, planar RFID tag structure and method for making same

Disclosed is a plasma processing method which comprises the steps of: performing plasma processing for a substrate placed on a substrate table in a processing chamber through use of plasma generated by applying an RF power to a gas or gases within the processing chamber while maintaining the pressure within the chamber at a predetermined pressure by feeding the gas or gases into the chamber and by evacuating the gas or gases from the chamber; lifting the substrate off the substrate table after stopping the application of the RF power to terminate the plasma process, while continuing the feeding and evacuating the gas or gases to maintain the inside of the chamber at the predetermined pressure: evacuating the chamber to a high vacuum after lifting off the substrate; and transferring the substrate out of the chamber.

Method of plasma processing a substrate placed on a substrate table

A process for reducing intrinsic stress and/or hydrogen content of a SiOx film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT

A method for fabricating gate electrodes and gate interconnects with a protective silicon oxide or silicon nitride cap and spacer formed by high density plasma chemical vapor deposition (HDPCVD). Silicon oxide or silicon nitride is deposited in a reaction zone of a HDPCVD reactor while providing two or more selected substrate bias powers, source powers and/or selected gas mixtures to tailor the shape and thickness of the film for desired applications. In one embodiment, a low bias power of below 500 Watts is provided in a first stage HDPCVD and the bias power is then increased to between 500 and 3000 Watts for a second stage to produce a protective film having thin sidewall spacers for enhanced semiconductor device density and a relatively thick cap.

Combined gate cap or digit line and spacer deposition using HDP

A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Inductively coupled plasma cvd

A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate characterized by the steps of: a) introducing di-tert-butylsilane and at least one other reactant gas capable of reacting with said di-tert-butylsilane to form silicon nitride or silicon dioxide into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed; b) maintaining the temperature of said zone and said substrate from about 450°C to about 900°C; c) maintaining the pressure in said zone from about 0.1 to about 10 Torr; and d) passing said gases into contact with said substrate for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film thereon.

Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate.

Disclosed is a diesel fuel comprising a base fuel selected from the group consisting of liquid hydrocarbons of the diesel boiling range, alcohols, and mixtures thereof, and an effective cetane number-increasing amount of at least one beta-nitroalkene of the formula: ##STR1## wherein R1, R2, R3 and R4 are individually selected from the group consisting of hydrogen and alkyl groups having from 1 to about 13 carbon atoms, with the proviso that the sum of R1, R2, R3 and R4 contains from 2 to about 13 carbon atoms.

Thomas S. Dory

Papers

Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate.

Use of selected beta-nitroalkenes as cetane number boosters for diesel fuel