A method of making a unitary channeled heat exchanger wherein the unitary heat exchanger is to be connected with a first fluid circulation system The unitary heat exchanger preferably includes a first manifold connectible to the first fluid circulation system and a heat transfer body fluidically connected to the manifold The unitary heat exchanger is fabricated by forming a sacrificial core with a first manifold forming portion and a body forming portion having surfaces shaped generally similar to the desired shapes of the first manifold and body of the unitary heat exchanger, depositing heat exchanger forming material about the sacrificial core to form a shell about the sacrificial core, the shell preferably including a manifold and a body integrally formed, providing an access opening through the shell of the unitary heat exchanger, and removing the sacrificial core from within the shell of the unitary heat exchanger through the access opening, thereby leaving passages within the manifold and the body of the unitary heat exchanger that are in fluidic communication with one another The body forming portion of the sacrificial is further preferably made with one or more holes so that upon deposition of heat exchanger forming material, posts are formed connecting upper and lower plates of the shell of the heat exchanger for increased structural integrity Additionally, the deposition can be advantageously controlled so that apertures remain after the post or posts are formed, which may be used for mounting components or as part of a second fluid circulation circuit

Method of making microchanneled heat exchangers utilizing sacrificial cores

A vertical MOSFET device having source, body and drain regions, includes an anode region in series with the drain region. The source, body and drain regions have a first forward current gain and the anode, drain and body regions have a second forward current gain, such that the sum of the current gains is less than unity. The anode region provides minority carrier injection into the drain region, enhancing device performance in power applications.

Power MOSFET with an anode region

A semiconductor device including a substrate of semiconductor material having charge carriers of one conductivity type and a main region of opposite conductivity type. A ring of said opposite conductivity type is disposed around the main region and an auxiliary region of said opposite conductivity type is disposed on the opposite surface of the substrate. The said rings and the said auxiliary region are spaced from the main region by distances that permit the depletion region of the main region to reach the ring and the auxiliary region when the main region is reversed biased with respect to the substrate.

Semiconductor device with high voltage breakdown resistance

Method of electrically interconnecting conductors

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (˜1014 /cm3) to block reverse bias voltage. The N+ layer is >20 μm thick and doped below ˜1017 /cm3 but above the N- doping to enhance output impedance and reduce gain at high Vce conditions. Or the N+ layer is formed with a thin (˜5 μm) highly doped (>1017 /cm3) layer and a thick (>20 μm) layer of ˜1016 /cm3 doping. A platinum dose of 1013 to ˜1016 /cm2 is ion implanted and diffused into the silicon to effect lifetime control. Gate and source contacts and body and source diffusions have an inter-digitated finger pattern with complementary tapers to minimize current crowding and wide gate buses to minimize signal delay. P+ doping beneath and marginally surrounding the gate pads and main gate bus negates breakdown conditions in widely spaced body regions and convex localities at the source finger end. Wide secondary gate buses parallel to the gate fingers have a P+ doped central stripe and transverse shorting bars spaced along their length. A non-polarizable PECVD passivation film of low phosphorus PSG and nitride or oxynitride or of oxynitride alone is made by controlling ionized gas residence time, silane partial pressure, and oxygen ratio during deposition, to minimize incorporation of Si-H into the film.

IGBT process to produce platinum lifetime control

A high di/dt, fast turn-on Darlington controlled rectifier semithyristor semiconductor switch embodies a body of semiconductor material wherein two controlled rectifier switches are formed, each having a separate gate and a separate cathode but both sharing a common anode. The cathode current of one controlled rectifier switch is the gate current for the second controlled rectifier switch thereby enabling a small initial current to be amplified and turn-on a larger controlled rectifier switch whereby the overall effect is a fast turn-on gate controlled switch with a high di/dt rating.

High d/d, fast turn-on darlington controlled semiconductor switch

Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

983,266. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. Sept. 27, 1962 [Oct. 6, 1961], No. 36658/62. Heading H1K. In a four-region, three-electrode device having first and second electrodes on one face of the wafer in contact with the first and second regions respectively and a third electrode on the opposite face of the wafer, the first PN junction is in the form of a strip with a large length to width ratio, and the second electrode has its effective perimeter close to, but uniformly spaced from, the perimeter of the first PN junction. As shown, a controlled rectifier, which can be switched on and off by means of its gate electrode, is made from an N-type silicon wafer by diffusing aluminium into its surface to form P-type layers 22, 24 surrounding an N-type layer 23. A gold-antimony N-type emitter ring 25, and gold-boron P-type gate electrodes 31, 32 and collector 21, are placed in position on the wafer and fused to the surface in a vacuum. Groove 26 is then etched through the P-type layer to divide it into two portions 22, 24. This construction provides a relatively large perimeter for the emitter junction and this enables the gate current to reduce the emitter current and hence the current gain so that the device switches off. An alternative configuration for the emitter and gate electrodes may be used to increase their co-operating perimeters, Fig. 8 (not shown). Specification 906,524 is referred to.

Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain

Semiconductor controlled rectifier with firing pin portion on emitter

1,079,382 Semi-conductor devices WESTINGHOUSE ELECTRIC CORPORATION March 24, 1965 [April 3, 1964], No 12486/65 Heading H1K An electrical component (as shown, a siliconcontrolled rectifier 10 contained in a hermetic enclosure 12 as described in Specification 1,009,926) is mounted on a block 34 forming part of a heat sink which further comprises a plurality of fins 42, there being an interference fit between the block 34 and the fins 42 Between each pair of adjacent fins are a looserfitting tin-plated brass spacer 44 and a solder ring 46 The fins 42 and a thicker top-plate 40 to be used for mounting the structure are preferably of tin-plated copper, the central block 34 of copper, aluminium, or an alloy thereof The top plate 40 is a press fit against a knurled edge on the block 34, whereas each fin 42 is initially provided with a central aperture slightly smaller in diameter than the block 34 and is then upset round the periphery of this aperture, placed in position over the block 34, and flattened so that the edge of the aperture is forced into an interference fit with the block (Fig 4, not shown)

Thorndike C New

Papers

High d/d, fast turn-on darlington controlled semiconductor switch

Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain

Semiconductor controlled rectifier with firing pin portion on emitter

Heat transfer apparatus for electronic component