Coupling module for use with phased-array antenna systems. The module includes separate phase shifters for the transmit and receive paths through the module. The transmit path also includes a power amplifier and the receive path includes a small signal, low noise amplifier. The two paths are coupled to the antenna radiating element by a transmit-receive switch or by a microwave circulator. A conducting septum is located between the devices in the transmit and receive paths to increase the isolation between the two paths. The individual phase shifters are optimized for unidirectional flow of comparatively large or small microwave signals and for the degree of desired phase shift resolution. By using vector modulators for the phase shift devices, the amplitude of the signal in the path can be compensated for temperature and frequency variations in the path.

Transmit-receive module for phased-array antennas

A circuit arrangement and method vary in response to temperature changes the signal swing of an input signal to an analog circuit which has a temperature-dependent effective linear signal range. A variable gain circuit varies the signal swing of the input signal in response to a control signal supplied thereto by a temperature control circuit so that the signal swing tracks changes in the effective linear signal range of the analog circuit. In this manner, signal to noise ratio may be optimized and distortion may be minimized over a range of operating temperatures for the analog circuit.

Circuit arrangement and method with temperature dependent signal swing

A structure, apparatus and method for deterring the temperature of an active region in semiconductor, particularly a FET is provided. A pair FETs are arranged on a silicon island a prescribed distance from one another where the silicon island is surrounded by a thermal insulator. One FET is heated by a current driven therethrough. The other FET functions as a temperature sensor by having a change in an electrical characteristic versus temperature monitored. By arranging multiple pairs of FETs separated by different known distances, the temperature of the active region of one of the FETs may be determined during operation at various driving currents.

Self heating monitor for SiGe and SOI CMOS devices

A semiconductor device, in particular a monolithic integrated circuit, having at least a heat-dissipating element and at least a temperature-sensitive element. According to the invention the temperature-sensitive element is a thermocouple. Application in particular in a fully integrated thermal oscillator in which the thermocouple signal is fed back in an amplified manner to a bistable heat dissipating element which as a result of this is switched to the other stable condition.

Semiconductor device having an integrated thermocouple

The invention describes how semiconductor configurations can be connected in parallel so as to prevent thermal instability. For this purpose each output transistor has the strongest thermal coupling with a driver transistor other than that to which it is electrically coupled, preferably that electrical coupling which is thermally weakest.

Parellel-connection of semiconductor systems with an arrangement for preventing thermal instability

A composite power semiconductor is disclosed which is adapted to avoid second breakdown and therefore provide stable operation. The composite semiconductor consists of an array of parallel-connected integrated circuits constructed in a single chip, each circuit comprising an output power device, for connection between an electric power source and a load, and one or more associated low-level control amplifiers. The effect of the thermal instability called second breakdown in such an array is to channel a disproportionate amount of electric current through the output device undergoing second breakdown, thereby increasing the temperature of the affected output device, thereby increasing the current, etc. until failure occurs. In the power semiconductor disclosed, the output power device and associated low-level amplifier are thermally closely coupled so that each is at all times substantially at the temperature of the other or bears a predetermined temperature relationship therewith, and the two are interconnected in a fashion that will produce high electrical gain. There is negative thermal feedback so that a change in power dissipation with resulting temperature change in the output device causes the low-level amplifier to alter the electric current carried by the output device. For example, an increase in temperature which will tend to cause the output device to conduct a larger amount of electric current and which will also tend to cause the low-level amplifier to conduct a larger amount of current, can have the result, because of the close thermal coupling and interconnection, of maintaining the output current substantially constant.

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Thornton Richard D

Papers

Power semiconductor device with negative thermal feedback