Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.

Organic Thin Film Transistors for Large Area Electronics

Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

Electron and ambipolar transport in organic field-effect transistors.

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 06 square centimeters per volt-second and current modulation greater than 10(4) Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors

https://science.sciencemag.org/content/sci/286/5441/945.full.pdf

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

It is now widely accepted that skin sensitivity will be very important for future robots used by humans in daily life for housekeeping and entertainment purposes Despite this fact, relatively little progress has been made in the field of pressure recognition compared to the areas of sight and voice recognition, mainly because good artificial “electronic skin” with a large area and mechanical flexibility is not yet available The fabrication of a sensitive skin consisting of thousands of pressure sensors would require a flexible switching matrix that cannot be realized with present silicon-based electronics Organic field-effect transistors can substitute for such conventional electronics because organic circuits are inherently flexible and potentially ultralow in cost even for a large area Thus, integration of organic transistors and rubber pressure sensors, both of which can be produced by low-cost processing technology such as large-area printing technology, will provide an ideal solution to realize a practical artificial skin, whose feasibility has been demonstrated in this paper Pressure images have been taken by flexible active matrix drivers with organic transistors whose mobility reaches as high as 14 cm2/V·s The device is electrically functional even when it is wrapped around a cylindrical bar with a 2-mm radius

/pdf/a-large-area-flexible-pressure-sensor-matrix-with-organic-233vkpdvcr.pdf

A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

The first solid‐state field‐effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor. The device characteristics have been optimized by controlling the doping levels of the polymer. The device is a normally off type and the source (drain) current can be modulated by a factor of 102–103 by varying the gate voltage. The carrier mobility and the transconductance have also been determined to be ∼10−5 cm2/V s and 3 nS, respectively, by means of electrical measurements.

Macromolecular electronic device: Field-effect transistor with a polythiophene thin film

Field-effect transistor with polythiophene thin film

Polythiophene field-effect transistor: Its characteristics and operation mechanism

Polyimide precursors were synthesized from a diamine and a diacid chloride that was derived from the reactant with promellitic dianhydride and o-nitrobenzyl alcohol. Their thermal properties were studied in nitrogen using dynamic thermogravimetry, and the photoreaction mechanism was investigated by ultraviolet and infrared spectrophotometry. The polyimide precursors were spin-coated onto silicon wafers, prebaked, and then exposed to UV light from a high pressure Hg–Xe lamp. When the films were dipped into 2% aqueous KOH after irradiation, the exposed area dissolved forming high resolution patterns. Relative sensitivities of the polymers were determined.

Preparation of positive photoreactive polyimides and their characterization

PURPOSE: The titled composition capable of exhibiting a nematic liquid crystal phase in a wide temperature range near room temperatures, making the severe dynamic drive possible, obtained by blending specific biphenyl-based compounds with a biphenylcyclohexane-based compound and an ester compound. CONSTITUTION: (A) Preferably 30W90wt% of two or more compounds selected from the group consisting of biphenyl-based compounds shown by the formula I and/or terphenyl-based compounds shown by the formula II (R 1 is 3W8C straight- chain alkyl or straight-chain alkoxy; R 2 is n-C 5 H 11 ) is blended with (B) a biphenylcyclohexane-based compound shown by the formula III (R 3 is R 2 ), (C) preferably 2W15wt% of a phenylcyclohexane-based compound shown by the formula IV (R 4 is 3W7C straight-chain alkyl), and (D) preferably 5W35wt% of an ester compound shown by the formula V or VI (R 5 WR 8 are 1W8C straight-chain alkyls or straight-chain alkoxy), to give the desired composition. EFFECT: A dynamic drive of 3V (or 2.8V) at 1/3 bias and 1/3 duty is possible. COPYRIGHT: (C)1981,JPO&Japio

Torahiko Ando

Papers

Macromolecular electronic device: Field-effect transistor with a polythiophene thin film

Field-effect transistor with polythiophene thin film

Polythiophene field-effect transistor: Its characteristics and operation mechanism

Preparation of positive photoreactive polyimides and their characterization

Nematic liquid crystal composition