A power conversion device includes a power switching circuit that supplies AC voltages generated between switching elements operating as upper arms and switching elements operating as lower arms, and a control circuit that generates and supplies to the driver circuit signals for controlling the switching operation of the switching elements by a PWM method in a first operational region in which frequency of an AC power to be outputted is low, and that generates and supplies to the driver circuit signals for controlling the switching operation of the switching elements at timings based upon the phase of the AC power to be outputted in an operational region in which the frequency of the AC power to be outputted is higher than in the first operational region.

Power Conversion Device

Disclosed here is a high resolution scanning electron microscope having an in-lens type objective lens. The microscope is structured so as to detect transmission electrons scattering at wide angles to observe high contrast STEM images according to each sample and purpose. A dark-field detector is disposed closely to the objective lens magnetic pole. The microscope is provided with means for moving the dark-field detector along a light axis so as to control the scattering angle of each detected dark-field signal.

Electron beam device

A scanning charged particle beam device (100) is described. The scanning charged particle beam device includes a beam emitter (102) for emitting a primary electron beam, a first scan stage for scanning the beam over a specimen, an achromatic beam separator (130) adapted for separating a signal electron beam from the primary electron beam, and a detection unit (172,174,178) for detecting signal electrons.

High throughput sem tool

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

Apparatus of Plural Charged-Particle Beams

An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-θ stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.

Electron beam apparatus

Abaxial aberration produced by an axial chromatic aberration correction lens is satisfactorily corrected. A secondary electron emitted from a sample (W) by an electron beam irradiation is deflected by a beam separator (77), and is deflected again by an aberration correction electrostatic deflector (711) to form a magnified image on the main plane of an auxiliary lens (712). Abaxial aberration is reduced by converging a secondary electron beam by the auxiliary lens (712) and allowing it to enter axial chromatic aberration correction lenses (714-717). An auxiliary lens (712) is used to form the image of an NA aperture (724) at almost the middle (718) in the light axis direction of the axial chromatic aberration correction lenses (714-717). A secondary electronic image having axial chromatic aberration corrected is magnified by a magnifying lens (719) and forms a final magnified image on the light reception surface of an EBCCD detector (722) by means of a final magnifying lens (721).

An electron optical system of projection type. An electron beam emitted from an electron gun (1) is applied to a sample (7) through a primary electron optical system. Electrons emitted from the sample are detected by a detector (12) through a secondary electron optical system. A Wien filter (8) composed of a multiple lens for axial chromatic aberration correction is disposed between an expanding lens (10) of the secondary electron optical system and a beam splitter (5) for splitting the beam into a primary electron beam and a secondary electron beam and used to correct the axial chromatic aberration caused by an objective lens (14) having a magnetic gap provided on the sample side and composed of an electromagnetic lens. With this constitution, the axial chromatic aberration can be reduced, the transmittance of the secondary electrons can be increased, and the sample can be evaluated with a high throughput.

Projection electron beam apparatus and defect inspection system using the apparatus

Disclosed is an electron beam apparatus, in which a plurality of electron beams is formed from electrons emitted from an electron gun 21 and used to irradiate a sample surface via an objective lens 28, said apparatus comprising: a beam separator 27 for separating a secondary electron beams emanating from respective scanned regions on the sample from the primary electron beams; a magnifying electron lens 31 for extending a beam space between adjacent beams in the separated plurality of secondary electron beams; a fiber optical plate 32 for converting the magnified plurality of secondary electron beams to optical signals by a scintillator and for transmitting the signals; a photoelectric conversion device 35 for converting the optical signal to an electric signal; an optical zoom lens 33 for focusing the optical signal from the scintillator into an image on the photoelectric conversion device; and a rotation mechanism 36 for rotating the photoelectric conversion device 35 around the optical axis.

Electron beam apparatus and a device manufacturing method using the same apparatus

The electron beam apparatus is provided with a stage for mounting a sample thereon, a primary optical system for generating an electron beam having an irradiation area and irradiating the electron beam onto the sample, a secondary optical system for detecting electrons which have been generated through the irradiation of the electron beam onto the sample and have acquired structural information of the sample and acquiring an image of the sample about a viewing area and an irradiation area changing section for changing the position of the irradiation area with respect to the viewing area.

Electron beam apparatus and sample observation method using the same

PROBLEM TO BE SOLVED: To provide an electron beam device carrying out evaluation of a test piece without dropping the throughput even when an evaluated pattern is made fine and to provide a method for manufacturing the device using it. SOLUTION: The electron beam device irradiates a plurality of primary beams on the test piece W, separates a plurality of secondary beams emitted from the test piece from the primary beams by a beam separator 20 and has the secondary beams make incidence in a detector 28 by enlarging the distance between a plurality of secondary beams by a magnifying optical system 5. The electron beam device is provided with a compensating lens 16 compensating the axial chromatic aberration in a plurality of primary beams and the beam separator 20 is installed between the compensating lens 16 and the test piece W. COPYRIGHT: (C)2007,JPO&INPIT

Toru Kaga

Papers

Electron beam device

Projection electron beam apparatus and defect inspection system using the apparatus

Electron beam apparatus and a device manufacturing method using the same apparatus

Electron beam apparatus and sample observation method using the same

Electron beam device and method for manufacturing device using it