Showing papers by "Toshihiko Kosugi published in 1999"

Impact of the SOI Substrate Parameters on the Radio-frequency Performance of the Quasi-SOI Power MOSFET

Abstract: We have investigated the impact of sal substrate parameters on the radio-frequency performance of quasi-Sal power MOSFETs to optimize the device structure. We found that increasing the top silicon layer thick­ ness of the quasi-Sal power MOSFET in­ creased the maximum breakdown voltage and decreased the on-resistance. Increasing the thickness of the top Si layer also increased the cutoff frequency, the maximum oscillation frequency, and the power-added efficiency. The power-added efficiency of a quasi-Sal power MOSFET with a thick buried oxide layer was also higher than with a thinner layer because the thicker buried oxide caused lower source-to-drain capacitance which enable better second harmonic tuning.