An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

A system for managing advertisements in a digital video environment, including methods for selecting suitable advertising based on subscriber profiles, and substituting advertisements in a program stream. The Ad management System (100) of the present invention manages the sales and insertion of digital video ads in cable tv, switched digital video and streaming internet based environments.

Advertising management system for digital video streams

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

In a thin-film transistor having a source zone (10), a drain zone (11) and a channel zone (9), and also a source electrode (15), a drain electrode (16) and a gate electrode (13), the source electrode (15) or the drain electrode (16) has been extended so as to cover the channel zone (9) and thereby prevent the entry of light into the channel zone (9) and the generation of a light-induced current associated therewith.

Thin-film transistor

A thin film MOS transistor includes a silicon layer (202) whose thickness, at least in the channel region is less than 2500 ANGSTROM . The silicon layer may be a polycrystalline silicon layer and its thickness in the channel region may be less than its thickness in the source and drain regions. Such thin film MOS transistors may be used in active matrix liquid crystal display devices having a plurality of picture elements arranged in a matrix, each picture element having a thin film MOS transistor as a switching element.

A thin film MOS transistor and an active matrix liquid crystal display device

Improved thin film transistors resistant to static electricity induced line faults are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional layer formed between crossing source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors or at a display capacitor.

Thin film transistor and display device including same

Improved thin film transistors resistant to photo-induced current and having improved electrical contact between electrodes and the source or drain regions are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional insulating layer formed between crossing orthogonal source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors.

Active matrix assembly with light blocking layer over channel region

Thin film transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of between about 100 Å and 2500 Å which are thinner than at least a portion of the source and drain regions and active matrix assemblies including thin film transistors for improved electro-optical displays are provided.

Toshihiko Mano

Papers

Thin-film transistor

A thin film MOS transistor and an active matrix liquid crystal display device

Thin film transistor and display device including same

Active matrix assembly with light blocking layer over channel region

Field effect transistor having thick source and drain regions