Packages for an integrated circuit die and methods and leadframes for making such packages are disclosed. The package includes a die, a die pad, peripheral metal contacts, bond wires, and an encapsulant. The die pad and contacts are located at a lower surface of the package. The die pad and the contacts have side surfaces which include reentrant portions and asperities to engage the encapsulant. A method of making a package includes providing a metal leadframe having a die pad in a rectangular frame. Tabs extend from the frame toward the die pad. The die pad and tabs have side surfaces with reentrant portions and asperities. A die is attached to the die pad. The die is electrically connected to the tabs. An encapsulant is applied to the upper and side surfaces of the leadframe. Finally, the leadframe is cut in situ so that the die pad and tabs are severed from the frame, the sides of the package are formed, and the package is severed from the leadframe.

Plastic integrated circuit package and method and leadframe for making the package

Packages for an integrated circuit device and methods and leadframes for making such packages are disclosed. The package includes a die, a die pad, leads, bond wires, and an encapsulant. The lower surfaces of the die pad and leads are provided with a stepped profile by an etching step that etches partially through the thickness of a peripheral portion of the die pad, and also etches partially through the thickness of portions of the leads. Encapsulant material fills in beneath the recessed, substantially horizontal surfaces of the die pad and leads formed by the above-described etching step, and thereby prevents the die pad and leads from being pulled vertically from the package body. Other portions of the die pad and leads are exposed at the lower surface of the package for connecting the package externally. A metal leadframe for making an encapsulated package includes an outer frame. A die pad is within and connected to the frame. Leads extend from the frame toward the die pad without contacting the die pad. After an encapsulation step, the die pad and leads are severed from the leadframe, and a completed package is cut from the leadframe. A portion of the severed leads may extend laterally beyond the package sides, and may be bent upwards at an oblique angle to facilitate connection of a solder interconnection to the package. The packages may be made one at a time, or a plurality of packages may be made simultaneously. Packages may be cut from the leadframe with a punch or saw.

Plastic integrated circuit device package and leadframe having partially undercut leads and die pad

Micro lead frame (MLF)-type semiconductor packages that allow the semiconductor packages to be stacked on top of each other. One aspect of the semiconductor package includes a leadframe, a plurality of electrical connectors, a semiconductor chip, and a sealing material for encapsulating the above components. The leadframe has a plurality of leads, with each one of the plurality of leads running from the top of the semiconductor package to the bottom of the semiconductor package. Each one of the plurality of leads has a top portion protruding from the top surface of the semiconductor package and a bottom portion protruding from the bottom surface of the semiconductor package. The leads allow for electrical connection of a second semiconductor package placed on top of the first semiconductor package. Further, the protruding parts of the leads form a space between the stacked semiconductor packages for improved heat dissipation.

Stackable semiconductor package and method for manufacturing same

There is provided a molded plastic electronic package (40) having improved thermal dissipation. A thermal dissipator (26'), such as a heat spreader or a heat slug is partially encapsulated in the molding resin (30). The thermal dissipator (26') has a density less than that of copper and a coefficient of thermal conductivity that is constant or increases as the package periphery (44) is approached.

Molded plastic semiconductor package including heat spreader

A packaged semiconductor die includes a heat sink having a locking feature that interlocks with the encapsulant encapsulating the die to minimize or eliminate delamination of the encapsulant from the heat sink. A surface of the heat sink can be exposed to the exterior of the encapsulant. The invention applies broadly to packaged integrated circuits including multichip modules and hybrid circuits, as well as to packaged transistors. In one embodiment of the invention, a locking moat has a cross-sectional shape that has, at a first distance beneath a locking surface of the heat sink, a width that is larger than a width at a second distance beneath the locking surface, the second distance being smaller than the first distance. The locking moat can have, for example, a "keyhole" cross-sectional shape or a circular cross-sectional shape. The locking moat can be formed by, for example, stamping or chemical etching. In another embodiment of the invention, the locking feature is a locking region. The locking region can be, for example, a plurality of dimples or deep holes formed by, for instance, stamping, grinding, mechanical or laser drilling, or chemical etching, a roughened area formed by abrading or selective electroplating, or a patterned region formed by coining.

Packaged semiconductor die including heat sink with locking feature

PURPOSE:To extend the life of titled device by a method wherein a semiconductor loading part is formed thicker than average thickness of lead frame to improve the radiating capacity while reducing especially transient heat resistance and restraining temperature rise in case of switching operations. CONSTITUTION:A semiconductor loading part 4 to be a bed 31 of lead frame is formed thicker than average thickness of lead frames 3. Then a semiconductor element pellet 5 is mounted on the semiconductor loading part 4 through the intermediary of a bonding member 6 such as solder etc. and then an electrode on the pellet 5 is connected to an inner lead of lead frame 3 by a metallic fine wire 7. Later a heat sink 2 is placed below a cavity of a transfer mold metal die and then the lead frame 3 is placed to be resin-formed. Finally the space between the semiconductor loading part 4 and the heat sink 2 is filled with thermoconductive epoxy sealing resin 1.

Resin sealed type semiconductor device with heat sink

PURPOSE:To improve heat dissipation characteristics, and to eliminate the need for an insulating sheet, etc on mounting to an external radiator plate, etc by coating the heat dissipation resin surface of a semiconductor element sealed with a resin with a rubbery resin in 20-200mum thickness CONSTITUTION:A collector terminal 13 on the back of a semiconductor element 2 is connected onto a heat dissipation substrate 5 through solder 15, and other electrodes formed to the element 2 are connected to an emitter terminal 16 and a base terminal 17 by using small-gage wires 18 and 19 consisting of Au, etc The element 2 and the small-gage wires 18 and 19 are sealed with a heat dissipation section resin material 12, thus forming a molded section 1 Improved epoxy resin, thermal conductive characteristics thereof are better than a normal resin as 5X10 Cal/cmS degC, is used as a resin material 12 at that time, and a heat dissipation resin surface 11 is coated with a rubbery resin layer 14 A cold vulcanizing type silicon rubber impregnated with fillers, a heating curing type urethane rubber, a synthetic rubber plastic, etc are used as the resin layer 14, and the thickness of the resin layer 14 is specified to 20-200mum Accordingly, the variation of thermal resistance up to an external radiator plate from the substrate 5 is reduced

Resin-sealed semiconductor device

A packaged semiconductor device having a semiconductor chip mounted on a bed part, a first molded layer which seals the bed part and the semiconductor chip such that the back of the bed part is exposed, a heat sink under the exposed back of the bed part and with a prescribed distance between it and the back of the bed part a second molded layer which is formed such that it covers the outside of the heat sink and the first molded layer, and also fills the gap between the exposed surface of the bed part and the heat sink, and leads which are disposed such that they pass through the second molded layer and their ends are in the first molded layer, and which are connected via bonding wires to the internal terminals of the semiconductor chip.

Recessed thermally conductive packaged semiconductor devices

An apparatus and a method for inspecting semiconductor devices, where a focused laser beam scans the semiconductor device, and the reflected beam thereof indicating height information of the reflection positions on the semiconductor device is detected for producing detected signals. The detected signals are compared with predetermined acceptance levels of height and distance.

Method and apparatus for inspecting semiconductor devices for their bonding status

PURPOSE: To improve the adhesive strength of a metallic frame and a molding resin, and to enhance heat-dissipating characteristics by forming irregularities on the radiating surface of the metallic frame while executing blast treatment. CONSTITUTION: In a semiconductor device having a shape that the radiating surface (the rear) of a metallic frame 1 on which a semiconductor chip 2 is mounted is electrically insulated by a resin 3, irregularities are formed to the radiating surface M of the metallic frame 1 while blast treatment is executed. The radiating surface M of the metallic frame 1 for a discrete power element is stamping-worked (irregularly-worked) on one surface in size of the square of 0.1mm depth and 0.5mm width, and roughened-surface working is executed to the surface of the radiating surface M through blast treatment. In this case, the working shape of irregularities may take a V shape, or a plane shape may take a striped, polygonal, circular or rectangular shape, etc. COPYRIGHT: (C)1988,JPO&Japio

Toshihiro Kato

Papers

Resin sealed type semiconductor device with heat sink

Resin-sealed semiconductor device

Recessed thermally conductive packaged semiconductor devices

Method and apparatus for inspecting semiconductor devices for their bonding status

Polymer planar-metallization type semiconductor device and manufacture threrof