An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Packages for an integrated circuit die and methods and leadframes for making such packages are disclosed. The package includes a die, a die pad, peripheral metal contacts, bond wires, and an encapsulant. The die pad and contacts are located at a lower surface of the package. The die pad and the contacts have side surfaces which include reentrant portions and asperities to engage the encapsulant. A method of making a package includes providing a metal leadframe having a die pad in a rectangular frame. Tabs extend from the frame toward the die pad. The die pad and tabs have side surfaces with reentrant portions and asperities. A die is attached to the die pad. The die is electrically connected to the tabs. An encapsulant is applied to the upper and side surfaces of the leadframe. Finally, the leadframe is cut in situ so that the die pad and tabs are severed from the frame, the sides of the package are formed, and the package is severed from the leadframe.

Plastic integrated circuit package and method and leadframe for making the package

Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.

Methods and apparatus of stacking DRAMs

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

Micro lead frame (MLF)-type semiconductor packages that allow the semiconductor packages to be stacked on top of each other. One aspect of the semiconductor package includes a leadframe, a plurality of electrical connectors, a semiconductor chip, and a sealing material for encapsulating the above components. The leadframe has a plurality of leads, with each one of the plurality of leads running from the top of the semiconductor package to the bottom of the semiconductor package. Each one of the plurality of leads has a top portion protruding from the top surface of the semiconductor package and a bottom portion protruding from the bottom surface of the semiconductor package. The leads allow for electrical connection of a second semiconductor package placed on top of the first semiconductor package. Further, the protruding parts of the leads form a space between the stacked semiconductor packages for improved heat dissipation.

Stackable semiconductor package and method for manufacturing same

A plastic encapsulated semiconductor device comprises a die pad, die pad support pins suspending the die pad, a semiconductor chip mounted on the die pad, thin metal wires for connecting the electrode of the semiconductor chip to leads, and a sealing resin sealing the foregoing components, while the respective bottom faces of the leads forming terminal portions are exposed. An upset process is performed with respect to the die pad support pins of a lead frame to form stepped portions such that the die pad is positioned higher in level than the leads. Since the lower portion of the sealing resin also underlies the die pad, enhanced adhesion is achieved between the die pad and the sealing rein, resulting in higher reliability. With the die pad positioned higher in level than the leads, there is no possibility of interference between the leads and the semiconductor chip even when the size of the semiconductor chip is freely changed. This enables the scaling up of a semiconductor chip and increases a packaging density in mounting semiconductor devices on a mother substrate.

Plastic encapsulated semiconductor device and method of manufacturing the same

There are provided a lead frame including a plurality of first external terminal portions 5 provided on a plane, inner lead portions 6 formed of back surfaces of the respective first external terminal portions and arranged so as to surround a region inside the inner lead portions, and second external terminal portions 7 formed of uppermost surfaces of convex portions positioned outside the respective inner lead portions; a semiconductor element 2 flip-chip bonded to the inner lead portions via bumps 3; and an encapsulating resin 4 encapsulating surroundings of the semiconductor element and the inner lead portions. The first external terminal portions are arranged in a lower surface region of the encapsulating resin along a periphery of the region, and the second external terminal portions are exposed on an upper surface of the encapsulating resin. A plurality of terminals 8 for electrical connection are provided in a grid pattern in a region inside the first external terminal portions and exposed on a lower surface of the encapsulating resin. A plurality of semiconductor elements or coils and resistors can be incorporated, and further semiconductor devices can be stacked.

Resin-encapsulated semiconductor device and lead frame, and method for manufacturing the same

An imaging module is formed by stacking: a first resin board; a second resin board having a first opening; a first electrically-conductive member electrically connecting the first resin board and the second resin board to each other; a printed circuit board having a second opening; a second electrically-conductive member electrically connecting the second resin board and the printed circuit board to each other; an imaging semiconductor chip mounted on the lower surface of the second resin board to cover the first opening and provided with an imaging sensor, an optical member placed on the upper surface of the second resin board to cover the first opening; a first semiconductor control chip provided with a control device for controlling operation of the imaging sensor and mounted on the lower surface of the first resin board.

Imaging module and method for forming the same

An optical apparatus includes an optical device (LED device or semiconductor imaging device) having a photoreceptor/light-emitting region, a peripheral circuit region and an electrode region, a transparent member having a larger light passing through region than the optical device and including, on one surface thereof, protruding electrodes for connection to the optical device, external connection electrodes for connection to a mounting substrate, conductive interconnects for connecting the protruding electrodes and the external connection electrodes, and a transparent adhesive provided between the optical device and the transparent member. In the optical apparatus, one surface of the optical device in which the photoreceptor/light-emitting region is formed and one surface of the transparent member are arrange so as to face to each other and electrodes of the optical device and the protruding electrodes of the transparent member are electrically connected and also adhered by the transparent adhesive.

Optical apparatus and optical module using the same

A resin-encapsulated semiconductor device includes a semiconductor chip, a plurality of inner leads that are connected to a group of electrodes of the semiconductor chip, respectively, and an encapsulating resin that encapsulates a connection part located between the semiconductor chip and the inner leads Each of the inner leads includes a protruded portion provided on a surface thereof on an outer side relative to the periphery of the semiconductor chip The protruded portion protrudes in a thickness direction and is provided with a step portion formed in its side portion The group of electrodes of the semiconductor chip is connected to surfaces of inner portions of the inner leads located on an inner side relative to their protruded portions, through electroconductive bumps, respectively The encapsulating resin encapsulates the semiconductor chip and the electroconductive bumps and is formed to expose surfaces of the protruded portions The surfaces of the protruded portions that function as external terminals can be reduced in size and thereby the pitch between the external terminals can be reduced

Toshiyuki Fukuda

Papers

Plastic encapsulated semiconductor device and method of manufacturing the same

Resin-encapsulated semiconductor device and lead frame, and method for manufacturing the same

Imaging module and method for forming the same

Optical apparatus and optical module using the same

Lead frame and method of producing the same, and resin-encapsulated semiconductor device and method of producing the same