The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Composition for etching

A method for manufacturing a light-emitting device includes providing a soluble member to cover at least one lateral surface of a light-emitting element. The soluble member includes a material soluble in a first solvent. A light-shielding member is provided to cover at least one lateral surface of the soluble member. The light-shielding member includes a light-shielding resin less soluble in the first solvent than the soluble member. The soluble member is removed with the first solvent. A first light-transmissive member is provided in a space formed by removing the soluble member.

Method for manufacturing light-emitting device

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can improve light extraction efficiency in comparison to the prior art with a simple configurationSOLUTION: A semiconductor light emitting element 1 includes: a substrate 2; a metal layer 3 on the substrate 2; a translucent conductive layer 4 on the metal layer 3; an insulation layer 30 on the translucent conductive layer 4; and a group III-V semiconductor structure 5 which is formed on the insulation layer 30 and includes a luminescent layer 8, a p-type semiconductor layer 9 and an n-type semiconductor layer 10 A refractive index n1 of a p-type GaP contact layer 11 of the p-type semiconductor layer 9, a refractive index n2 of the insulation layer 30 and a refractive index n3 of the translucent conductive layer 4 satisfies the following relational expression: n1>n2<n3SELECTED DRAWING: Figure 3

Semiconductor light-emitting element

The present disclosure relates to a cleaning composition for removing an oxide including one selected from an organic acid, an inorganic acid, and any combination thereof; one selected from an organic salt, an inorganic salt, and any combination thereof; an oxidizing agent; a surfactant; and water, and a method of cleaning using the cleaning composition.

Cleaning composition for removing oxide and method of cleaning using the same

Provided are a photo-electric power generating element having a sufficient fill factor, and enabling a manufacturing cost to be reduced, and a manufacturing method therefor. A photo-electric power generating element 10 including: an n-type crystal semiconductor substrate 11 ; a p-type amorphous silicon thin film 13 overlaid on one face side of the n-type crystal semiconductor substrate 11 ; and an n-type amorphous silicon thin film 15 overlaid on another face side of the n-type crystal semiconductor substrate 11 , in which the photo-electric power generating element 10 further includes an intrinsic amorphous silicon thin film 12 interposed between the n-type crystal semiconductor substrate 11 and the p-type amorphous silicon thin film 13 , the n-type crystal semiconductor substrate 11 and the n-type amorphous silicon thin film 15 are directly bonded, and a side on which the n-type amorphous silicon thin film 15 is provided is used as a plane of light incidence.

Photovoltaic element and manufacturing method therefor

This invention is concerning an etchant composition used to etch a silicon-containing film formed on a target substrate. The etchant composition includes at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride and an organic acid.

Tsuguhiro Tago

Papers

Etchant composition and etching method