Showing papers by "Tsutomu Uesugi published in 2015"
Patent•
15 Jan 2015
TL;DR: In this paper, the authors developed a technique capable of specifying the position of an electric field region for a short time, the electric field being developed by current collapse caused in a hetero junction field effect transistor.
Abstract: PROBLEM TO BE SOLVED: To develop a technique capable of specifying the position of an electric field region for a short time, the electric field region being developed by current collapse caused in a hetero junction field effect transistor.SOLUTION: An evaluation device 100 for observing a current collapse phenomenon caused in a hetero junction field effect transistor 1 includes: a light irradiation device 10 for irradiating laser beams on the hetero junction field effect transistor 1; and a detection device 20 for detecting the strength of a secondary higher harmonic (SHG: Second Harmonic Generation) generated in a region irradiated with the laser beams.