T
Tsuyoshi Amano
Researcher at Dai Nippon Printing
Publications - 93
Citations - 683
Tsuyoshi Amano is an academic researcher from Dai Nippon Printing. The author has contributed to research in topics: Extreme ultraviolet lithography & Mask inspection. The author has an hindex of 14, co-authored 93 publications receiving 671 citations. Previous affiliations of Tsuyoshi Amano include NEC.
Papers
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Journal ArticleDOI
Phase defect characterization on an extreme-ultraviolet blank mask using microcoherent extreme-ultraviolet scatterometry microscope
TL;DR: In this paper, a micro-coherent EUV scatterometry microscope (micro-CSM) was developed for characterization of phase defects, which is based on a coherent diffraction imaging method.
Proceedings ArticleDOI
Development of new FIB technology for EUVL mask repair
Fumio Aramaki,Takashi Ogawa,Osamu Matsuda,Tomokazu Kozakai,Yasuhiko Sugiyama,Hiroshi Oba,Anto Yasaka,Tsuyoshi Amano,Hiroyuki Shigemura,Osamu Suga +9 more
TL;DR: In this article, focused ion beam (FIB) and electron beam (EB) were used to repair EUVL masks beyond hp15nm in view of the minimum repairable size.
Journal ArticleDOI
Development of extreme ultraviolet mask pattern inspection technology using projection electron beam optics
Ryoichi Hirano,Hidehiro Watanabe,Susumu Iida,Tsuyoshi Amano,Tsuneo Terasawa,Masahiro Hatakeyama,Takeshi Murakami +6 more
TL;DR: In this paper, a projection electron microscopy (PEM) system was employed to achieve the required inspection sensitivity applicable for 1X nm node, which enabled us to do inspection in higher resolution and with higher speed.
Proceedings ArticleDOI
EUV patterned mask inspection system using a projection electron microscope technique
Hidehiro Watanabe,Ryoichi Hirano,Susumu Iida,Tsuyoshi Amano,Tsuneo Terasawa,Masahiro Hatakeyama,Takeshi Murakami,Shoji Yoshikawa,Kenji Terao +8 more
TL;DR: In this paper, the concept and the current status of a newly developed PEM pattern inspection system are presented and an image processing technique with learning functions to enhance the system's detection capability is investigated.
Journal ArticleDOI
Patterned mask inspection technology with projection electron microscope technique on extreme ultraviolet masks
Ryoichi Hirano,Susumu Iida,Tsuyoshi Amano,Tsuneo Terasawa,Hidehiro Watanabe,Masahiro Hatakeyama,Takeshi Murakami,Kenji Terao +7 more
Abstract: High-sensitivity extreme ultraviolet (EUV) mask pattern defect detection is one of the major issues remaining to be addressed in device fabrication using extreme ultraviolet lithography. In order to achieve inspection sensitivity and suitability for the 1× nm node, a projection electron microscope (PEM) system is employed that enables high-speed/high-resolution inspection, which is not possible using conventional deep ultraviolet or electron beam inspection systems. By employing higher electron energy in the electron optics (EO) exposure system and by improving the PEM design, we have minimized the aberration that occurs when working with EO systems and we have improved the transmittance of the system. Experimental results showing the improved transmittance were obtained by making electron throughput measurements. To guarantee the tool’s aptness for 16-nm node EUV mask inspection, corresponding sized programmed defects on masks were designed, and the defect detection sensitivity of the EO system was evaluated. Improvements in image resolution and electron throughput have enabled us to detect 16-nm sized defects. The PEM system was integrated into a pattern inspection system for defect detection sensitivity evaluation.