The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

Semiconductor Integrated Circuit Device

The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal.

Semiconductor device and driving method thereof

Using the leakage current of the base resistance of the bipolar transistor, semiconductor integrated circuit device which detects an overheat condition of the elements protected from overheat, is realized. The overheat detection circuit and the elements or the circuits which might be protected from overheat, are formed on the same substrate. The said overheat detection circuit is comprised of a bipolar transistor, its base resistance, and a constant-voltage source. The constant-voltage source provides a certain voltage to isolate the elements. The joint base resistance is located close to elements or circuits which might be protected from overheat and located far from the constant-voltage source.

Semiconductor integrated circuit device

A single step etched moat ( 24 ), having a regular grid work mask ( 28 ) of mesa shields ( 42 ) and edge termination shields ( 44 ), is utilized to form, in a single etching step, semiconductor devices ( 22 ) having lengthy edge terminations for reduced edge termination failure. The desired semiconductor devices ( 22 ) include a high resistivity, monocrystalline grown substrate layer ( 30 ), a low resistivity epitaxial base layer ( 32 ), and a low resistivity top layer ( 36 ). The regular grid work of mesa shields ( 42 ) and edge termination shields ( 44 ) define open grid lines ( 48 ) and open grid rings ( 46 ). The open grid lines ( 48 ) are wider than the open grid rings ( 46 ), so that as the moats ( 24 ) are etched, a deeper grid line divot ( 50 ) is formed below the open grid lines ( 48 ) and a more shallow grid ring divot is formed below the open grid ring ( 46 ).

Single step etched moat

An apparatus for use with a semiconductor substrate includes a digital interface, a digital-to-analog converter and a thermal sensor circuit. The digital interface stores a value that indicates a desired thermal threshold, and the digital-to-analog converter provides an analog signal that indicates the value. The thermal sensor circuit uses the analog signal to set the desired thermal threshold and indicate when a temperature of the substrate exceeds the thermal threshold.

Thermal sensing circuit

An apparatus for an improved output buffer includes a symmetrical pre-gain stage and a gain stage. The pre-gain stage includes a pair of matched differential amplifiers that are arranged to provide a differential intermediary signal. The gain stage is arranged to receive the differential intermediary signal and provide a single-ended output signal. The pre-gain stage differential amplifiers include transistors that are arranged as differential pairs, where each of differential pair transistors is minimally sized to provide very low capacitive loading. The pre-gain stage differential amplifiers are matched such that symmetrical amplification is obtained from the differential intermediary signal. The pre-gain stage arrangement provides for a differential intermediary signal such that common-mode noise rejection and power supply noise rejection are enhanced. The improved output buffer operates at high frequencies that are well into the gigahertz operating range, while maintaining reasonably high-gain and very low distortion in the signal symmetry.

High speed output buffer

A circuit utilizable for protecting an integrated circuit feature from electrostatic discharge is disclosed. A first bipolar transistor has its emitter connected to the IC feature and its collector connected to ground. A second bipolar transistor has its emitter connected to the IC feature and its collector connected to its base and to the base of the first bipolar transistor. A field effect transistor has its gate and drain connected to the IC feature and its body connected to its source and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor. A diode has its cathode connected to the body and the source of the field effect transistor and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor.

ESD protection for inputs requiring operation beyond supply voltages

The crowbar current in a driver inverter, which has a pair of complementary driver transistors, is substantially reduced by adjusting the turn on and turn off times of the p-channel and n-channel driver transistors such that each driver transistor turns on after the other driver transistor has been turned off.

High-speed clock buffer that has a substantially reduced crowbar current

PROBLEM TO BE SOLVED: To realize a temperature indicating circuit which is capable of detecting and indicating the temperature of a board, by a method wherein a first and a second comparison signal flow at a measured temperature higher than a second approximation, and state signals which represent a preceding time to a decrease are fed at a measured temperature lower than a first approximation. SOLUTION: Two comparators 102 and 103 are connected to a flip-flop 106. Temperatures-dependent voltage signals (signals) VTA and VTB of two measured temperature are command with the reference voltage VDAC of an N-bit DAC 108. The output signal COMP 1 of the first comparator 102 is high, and when the output signal COMP 2 of the second comparator 104 is converted from a low state to a high state, the output signal HOT of the flip-flop 106 is activated to be high. The output signal HOT is driven into a high state following an increase in signal VTB above a higher second approximation out of the first approximation of a first measured temperature and the second approximation of a second measured temperature, and precedes a decrease in a measured temperature below the lower first approximation out of the first and the second approximation.

Temperature indicator circuit with temperature hysteresis

A circuit for protecting an interface cable driver and the circuitry attached to the driver from electrical overstress damage, such as that which may arise from an electrostatic discharge. The protection circuit includes a sensing element, typically a field oxide transistor, which is used to sense when an EOS transient raises the input/output voltage above the normal operating range. The sensing element is configured to change logic state when the transient reaches a predetermined threshold level. The change in state is used as a feedback path to turn on the interface driver transistor connected to ground and turn off the interface driver transistor connected to the power supply. The interface driver transistor connected to ground then acts to shunt away the transient, preventing damage to the driver and internal circuitry.

Tuong Hai Hoang

Papers

High speed output buffer

ESD protection for inputs requiring operation beyond supply voltages

High-speed clock buffer that has a substantially reduced crowbar current

Temperature indicator circuit with temperature hysteresis

Field oxide transistor based feedback circuit for electrical overstress protection