A system and method for providing informational labels with perceived depth in the field of view of a user of a head mounted display device. In one embodiment, the method includes determining a physical location of the user and the head mounted display device, and identifying and determining a distance from the user to one or more objects of interest in the user's field of view. Using the distance from the user for each object, one can calculate a disparity value for viewing each object. The processor of the head mounted device may gather information concerning each of the objects in which the user is interested. The head mounted display device then provides a label for each of the objects and for each eye of the user, and, using the disparity values, places the labels within the field of view of the user.

3d positioning of augmented reality information

Head-worn adaptive display

An eyepiece includes a mechanical frame adapted to secure a lens and an image source facility above the lens. The image source facility includes an LED, a planar illumination facility and a reflective display. The planar illumination facility converts a light beam from the LED received on a side of the planar illumination facility into a top emitting planar light source, uniformly illuminates the reflective display, and is substantially transmissive to allow reflected light to pass through towards a beam splitter. The beam splitter is positioned to receive the image light and to reflect a portion onto a mirrored surface. The mirrored surface is positioned and shaped to reflect the image light into an eye of a user of the eyepiece thereby providing an image within a field of view, the mirrored surface further adapted to be partially transmissive within an area of image reflectance.

Eyepiece with uniformly illuminated reflective display

Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication

An information communication method of transmitting a signal is provided that uses a change in luminance. The method includes determining a pattern of the change in luminance by modulating the signal to be transmitted, and transmitting the signal by a light emitter changing in luminance according to the determined pattern. The pattern of the change in luminance is a pattern in which one of two different luminance values occurs in each arbitrary position in a predetermined duration. The determining a pattern of change in luminance includes dividing the predetermined duration into four duration units, so that one of two different luminance value occurs in one duration unit of the four duration units and the other luminance value of the two different luminance value occurs in three duration units of the four duration units, the three duration units are other than the one duration unit.

Information communication method

An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes. An array measurement circuit measures the charge collected and outputs pixel data defining an image.

Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure

The present invention provides a MOS or CMOS based active sensor array for producing electronic images from charge producing light. Each pixel of the array includes a layered photodiode for converting the light into electrical charges and MOS and/or CMOS pixel circuits located under the layered photodiodes for collecting the charges. The present invention also provides additional MOS or CMOS circuits in and/or on the same crystalline substrate for processing the collected charges for the purposes of producing images. The layered photodiode of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and/or CMOS pixel circuits so that extremely small pixels are possible with almost 100 percent packing factors. In preferred embodiments, pixel crosstalk is minimized by careful design of the bottom photodiode layer with the addition of carbon to the doped amorphous silicon N or P layer to increase the electrical resistivity. The increased electrical resistivity also helps avoid adverse electrical effects at the edge of the pixel array where the pixel electrodes may be in close proximity to the material used for a top transparent electrode layer.

Camera with mos or cmos sensor array

A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.

Visible/near infrared image sensor

An electronic imaging sensor. The sensor includes an array of photo-sensing pixel elements for producing image frames. Each pixel element defines a photo-sensing region and includes a charge collecting element for collecting electrical charges produced in the photo-sensing region, and a charge storage element for the storage of the collected charges. The sensor also includes charge sensing elements for sensing the collected charges, and charge-to-signal conversion elements. The sensor also includes timing elements for controlling the pixel circuits to produce image frames at a predetermined normal frame rate based on a master clock signal (such as 12 MHz or 10 MHz). This predetermined normal frame rate which may be a video rate (such as about 30 frames per second or 25 frames per second) establishes a normal maximum per frame exposure time. The sensor includes circuits (based on prior art techniques) for adjusting the per frame exposure time (normally based on ambient light levels) and novel frame rate adjusting features for reducing the frame rate below the predetermined normal frame rate, without changing the master clock signal, to permit per frame exposure times above the normal maximum exposure time. This permits good exposures even in very low light levels. (There is an obvious compromise of lowering of the frame rate in conditions of very low light levels, but in most cases this is preferable to inadequate exposure.) These adjustments can be automatic or manual.

Electronic image sensor

An active pixel sensor is disclosed. In one embodiment, a solid state radiation detection unit may be fabricated using a semiconductor substrate having a plurality of CMOS pixel circuits incorporated into the substrate. Typically, each of an array of pixel circuits includes a charge collecting pixel electrode, a charge sensing node, a gate bias transistor separating the charge collecting pixel electrode and the charge sensing node, and a pixel capacitor to store charges collected by the charge collecting pixel electrode. A charge measuring circuit comprising at least one transistor may also be configured with each pixel circuit. The sensor may further include a radiation absorbing layer comprised of photoconductive material, as well as a surface electrode layer comprised of electrically conducting material. The sensor is typically configured with an array measurement circuit for measuring charges collected by the array of charge collecting pixel electrodes and for pixel data output.

Tzu-Chiang Hsieh

Papers

Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure

Camera with mos or cmos sensor array

Visible/near infrared image sensor

Electronic image sensor

Photoconductor-on-active-pixel (POAP) sensor utilizing equal-potential pixel electrodes