Laser deposition of polymer and biomaterial films.

Review of conductor-insulator-semiconductor (CIS) solar cells

A model for the collection of minority carriers generated in the depletion region of a Schottky barrier solar cell

CHAPTER 6 – Surface-Barrier Solar Cells

Surface-barrier solar cells use only one semiconductor, in one doping type. They all have an electrostatic-field barrier, which begins at the semiconductor surface, as the principal source of photovoltaic action. There are basically two types of surface-barrier cells and can be distinguished by the materials system used to form the semiconductor electrostatic field barrier: one type is the all-solid-state cell and the other is the electrolyte–solid-state cell. The numerical analysis approach also may be adapted to p-type semiconductors and may be employed for electrochemical cells. It describes an analytical analysis of the surface-barrier cell in the band diagram. The analytical analysis shows the role of diffusion in a collection of photogenerated minority carriers in surface-barrier cells with quasi-neutral absorber regions. Further, this chapter provides details of device analysis and determines findings from computer simulation studies. This numerical approach is used to develop the light and dark relationship between several surface-barrier solar cell examples.

Surface-barrier Solar Cells

The performance of back-illuminated MIS Schottky barrier solar cells is investigated theoretically. The treatment takes into account the role of surface recombination velocity and the presence of a depletion region in the semiconductor. Computations for J sc are made for back-illuminated n-Si[SiO 2 Au Schottky barrier solar cells for different values of the thickness of the cell with various surface recombination velocities. It is shown that for a given donor concentration the back-illuminated solar cells give higher short-circuit photocurrent upto a certain value of thickness beyond which front-wall illumination cells are better. The limitations of front-wall MIS Schottky barrier solar cells are discussed in comparison with the back-illuminated solar cells. Es werden die Kennwerte einer ruckseitenbestrahlten MIS-Schottkybarrieren-Solarzelle theoretisch untersucht. Die Behandlung berucksichtigt die Oberflachenrekombinationsgeschwindigkeit und das Vorhandensein einer Verarmungsrandschicht in dem Halbleiter. Berechnungen werden fur ruckseitenbestrahlte n-Si[SiO 2 Au-Schottkybarrieren-Solarzellen mit unterschiedlicher Dicke der Zelle fur verschiedene Oberflachenrekombinationsgeschwindigkeiten durchgefuhrt. Es wird gezeigt, daβfur eine gegebene Donatorkonzentration die ruckseitenbestrahlten Solarzellen einen hoheren Kurzschluβ-Photostrom bis zu einem bestimmten Wert der Dicke aufweisen, uber den hinaus die vorderseitig bestrahlten Zellen besser sind. Die Grenzwerte der Vorderseiten-MIS-Schottkybarrieren-Solarzellen werden im Vergleich zu ruckseitenbestrahlten Solarzellen diskutiert.

V. J. Rao

Papers

Theoretical performance of back-illuminated thin film MIS Schottky barrier solar cells

Electrical Properties of Polyamide on n-GaAs(100) Interfaces Deposited by the Pulsed Laser Evaporation Technique