Bismuth sulfide (Bi2 S3 ) nanomaterials are emerging as a promising theranostic platform for computed tomography imaging and photothermal therapy of cancer Herein, the photothermal properties of Bi2 S3 nanorods (NRs) were unveiled to intensely correlate to their intrinsic deep-level defects (DLDs) that potentially could work as electron-hole nonradiative recombination centers to promote phonon production, ultimately leading to photothermal performance Bi2 S3 -Au heterojunction NRs were designed to hold more significant DLD properties, exhibiting more potent photothermal performance than Bi2 S3 NRs Under 808 nm laser irradiation, Bi2 S3 -Au NRs could trigger higher cellular heat shock protein 70 expression and more apoptotic cells than Bi2 S3 NRs, and caused severe cell death and tumor growth inhibition, showing great potential for photothermal therapy of cancer guided by computed tomography imaging

Deep-Level Defect Enhanced Photothermal Performance of Bismuth Sulfide-Gold Heterojunction Nanorods for Photothermal Therapy of Cancer Guided by Computed Tomography Imaging.

Bi2S3 nanotubes and nanoparticle in the form of thin films were deposited on fluorine doped SnO2 (FTO) coated conducting glass substrates by Aerosol Assisted Chemical Vapor Deposition (AACVD) using tris-(N,N-diethyldithiocarbamato)bismuth(III), [Bi(S2CN(C2H5)2)3]2 (1) as a precursor. Thin films were deposited from solutions of (1) in either chloroform, dichloromethane, or a 1:1 mixture of chloroform and toluene at temperature between 350 to 450 °C and characterized by X-ray diffraction (XRD), UV−vis spectroscopy, field emission gun scanning electron microscopy (FEGSEM), and energy dispersive X-ray (EDX) analysis. FEGSEM images of films deposited from chloroform or dichloromethane exhibit well-defined and evenly distributed nanotubes with an average internal diameter of 40 nm. Films deposited from chloroform/toluene, on the other hand, have compact nanostuctured morphology. Bandgaps of 1.85 and 1.8 eV were estimated for nanotubes and nanoparticles, respectively, by extrapolating the linear part of the Tauc...

Photoelectrochemical and photoresponsive properties of Bi2S3 nanotube and nanoparticle thin films

Orthorhombic Bi2S3 (bismuthinite) nanorods and nanowires are synthesized by the solventless thermolysis of bismuth alkylthiolate precursors. Reactions carried out in air at ∼225 °C in the presence of a capping ligand species, octanoate, produce high aspect ratio (>100) nanowires. Lower aspect ratio nanowires (∼7) are produced by the same approach with the addition of elemental sulfur at lower reaction temperature (∼160 °C). Both the nanowires and nanorods are oriented with their long axes in the [002] crystallographic direction. Higher reaction temperatures (∼250 °C) produce crossed nanowire networks, or fabrics, with highly oriented growth as a result of heterogeneous nanowire nucleation and epitaxial elongation off the surface of existing wires.

Solventless Synthesis of Bi2S3 (Bismuthinite) Nanorods, Nanowires, and Nanofabric

The development of efficient visible-light photocatalyst heterostructures remains a major concern for obtaining desirable material properties and effective carrier transformation. Here, we demonstrate, for the first time, the synthesis of novel heterostructures of Fe2O3/Bi2S3 nanorods via a one-step hydrothermal route and employed effectively as visible-light-driven photocatalysts for the degradation of organic pollutants of methylene blue dye (MB) and phenol. TEM and FE-SEM images displayed that Fe2O3/Bi2S3 heterostructure is nanorods with ∼30–60 nm diameter and 0.5–1 μm length. The newly prepared Fe2O3/Bi2S3 nanorods exhibit greatly enhanced photocatalytic activity toward both MB and phenol compared to pure Bi2S3 and the heterostructure with low molar ratio of 0.06 Fe2O3/Bi2S3 exhibits the best photocatalytic activity under visible light irradiation. A maximum degradation efficiency of MB and phenol ∼90% and 96% was accomplished using Fe2O3/Bi2S3 nanorods compared to only 60% and 69% using pure Bi2S3, respectively. The photodegradation rates for MB and phenol are promoted respectively as ∼2.6 and 3 times using Fe2O3/Bi2S3 heterostructure higher than pure Bi2S3. Photoluminescence spectra measurement along with the calculation of relative band alignment indicated that Fe2O3/Bi2S3 heterostructure significantly suppress the recombination of photogenerated charge carriers, which is beneficial to improve the photocatalytic activity. The facile synthesis approach, unique photocatalytic activity and excellent reusability of the current Fe2O3 modified Bi2S3 nanostructure make it a promising photocatalyst for the environmental remediation related fields.

Hydrothermal synthesis of novel heterostructured Fe2O3/Bi2S3 nanorods with enhanced photocatalytic activity under visible light

Bi2S3-embedded mesoporous silica nanoparticles for efficient drug delivery and interstitial radiotherapy sensitization.

The paper presents the X-ray photoelectron spectra (XPS) of the valence band and core levels of the semiconductive Bi 2 S 3 single crystal, which shows anomalies in various physical properties and weak phase transitions without change of symmetry. The XPS were measured with monochromatized Al K a radiation in the energy range 0-1400 eV and the temperature range 160-460 K. The valence band is located 0.55-6.5 eV below the Fermi level and shows non-linear dependence on temperature. Experimental energies of the valence band and core levels are compared with the results of theoretical ab initio calculations of the molecular model of the Bi 2 S 3 crystal. The chemical shifts in the Bι 2 S 3 crystal for the Bi and S states are obtained. Results revealed the origin of a weak polarity of the crystals at room temperature, which results in anomalies in the physical properties, and shifts the Fermi level and all the electronic spectrum.

X-ray Photoelectron Spectra and Electronic Structure of Bi2S3 Crystals

The paper presents the X-ray photoelectron spectra (XPS) of the valence band and core levels of the semiconductive Bi2S3 single crystal, which shows anomalies in various physical properties and weak phase transitions without change of symmetry. The XPS were measured with monochromatized Al Ka radiation in the energy range 0–1400 eV and the temperature range 160–460 K. The valence band is located 0.55–6.5 eV below the Fermi level and shows non-linear dependence on temperature. Experimental energies of the valence band and core levels are compared with the results of theoretical ab initio calculations of the molecular model of the Bi2S3 crystal. The chemical shifts in the Bi2S3 crystal for the Bi and S states are obtained. Results revealed the origin of a weak polarity of the crystals at room temperature, which results in anomalies in the physical properties, and shifts the Fermi level and all the electronic spectrum.

Editor's Choice X-ray Photoelectron Spectra and Electronic Structure of Bi2S3 Crystals

The paper presents the X-ray photoelectron spectra (XPS) of the valence band and core levels of semiconductor ferroelectric Sb2S3 single crystals, which show weak phase transitions and anomalies of various physical properties. The XPS were measured with monochromatized Al K α radiation in the energy range 0-1450 eV and the temperature range 160-450 K. The valence band is located 0.8-7.5 eV below the Fermi level. Experimental results of the valence band and core levels are compared with the results of theoretical ab initio calculations of the molecular model of Sb2S3 crystal. The chemical shifts in Sb2S3 crystal for the Sb and S states are obtained. Results revealed that the small structural rearrangements at the phase transition T c1 = 300 K shift the Fermi level and all electronic spectrum. Also, temperature dependence of a spontaneous polarisation shifts the electronic spectra of the valence band and core levels. Specific temperature-dependent excitations in Sb 3d core levels are also revealed.

X-ray Photoelectron Spectroscopy of Sb2S3 Crystals

The paper presents the X-ray photoelectron spectra (XPS) of the valence band and core levels of the ferroelectric SbSI single crystal. Results revealed the new phenomenon--splitting of the core levels at the phase transition temperature T cl . The XPS are measured with monochromatized Al K f radiation in the energy range 0-1400 eV and the temperature range 130-330 K. Experimentally obtained energies are compared with the results of theoretical ab initio calculations. This is the first observation of the splitting of the XPS in a ferroelectric crystal. The mechanism of the XPS splitting in SbSI crystals is discussed.

V. Lazauskas

Papers

X-ray Photoelectron Spectra and Electronic Structure of Bi2S3 Crystals

Editor's Choice X-ray Photoelectron Spectra and Electronic Structure of Bi2S3 Crystals

X-ray Photoelectron Spectroscopy of Sb2S3 Crystals

Splitting of the XPS in Ferroelectric SbSI Crystals

XPS and electronic structure of quasi-one-dimensional BiSI crystals