Valerii V Badikov

TL;DR: In this paper, BaGa4S7 and BaGa 4Se7 were grown by the Bridgman-Stockbarger technique in sufficiently large sizes and with good optical quality to measure the refractive indices and analyze the phase-matching configurations.

Abstract: The results of radiation resistance measurements for twelve nonlinear crystals are presented. The crystals include the well-known nonlinear CdGeAs2, ZnGeP2, AgGaSe2, GaSe, AgGaS2, and Ag3AsS3 crystals operating in the middle IR range, new mixed AgGaGeS4 and Cd0.35Hg0.65Ga2S4 crystals, two-phase (orange and yellow) HgGa2S4 crystal, and the doped GaSe:In crystal. The mixed crystals and the two-phase HgGa2S4 crystal are transparent in the range from 0.4 — 0.5 to 11.5 — 14.5 μm. The measurements were performed using a pulsed single-mode highly stability TEA CO2 laser with an output pulse duration of ~30 ns. The damage thresholds of new nonlinear AgGaGeS4 and Cd 0.35Hg0.65Ga2S4 crystals and of the HgGa2S4 crystal (the orange and yellow phases) were found to be 1.5 — 2.2 times higher than for the crystals operating in the middle IR range.

TL;DR: In this article, the basic optical and thermal properties of HgGa2S4 are studied and the combined properties of these materials can provide for them a leading position among the materials used in nonlinear-optical devices for mid-IR-frequency conversion.

TL;DR: The results show the possibility of construction of the compact diode-pumped solid-state pulsed or CW laser generating at 4.3 μm in the power level of tens mW operating at room temperature.

TL;DR: In this paper, a parametric generation in a HgGa2S4 crystal pumped by a nanosecond Nd:YAG laser is investigated and the experimental results demonstrate the outlook for using HgGA2S 4 crystals for the development of efficient optical parametric oscillators in the mid-IR range.