A latch-based level-shifter is provided that includes an edge-triggered pulse generator (110) that drives a switch (115) to switch off and isolate a pair of cross-coupled inverters (105) in the level-shifter from ground for a transition period responsive to rising and falling edges in an input signal.

Low-power wide-range level shifter

The invention relates to a single event transient disturbance reinforced latch circuit and belongs to the field of circuit design. The single event transient disturbance reinforced latch circuit comprises a first lowpass filter unit and a latch. First way data input of a data input end is connected with a first input end of the latch. Second data input of the data input end is connected with a second input end of the latch through the first lowpass filter unit. The first lowpass filter unit is a circuit unit which is composed of a passive device and is used for removing a high-frequency signal. The first lowpass filter unit for removing the high-frequency signal is composed of the passive device, the filter capacity only needs to be greater than the maximum pulse width produced by single event transient disturbance, the working frequency of the latch circuit is not influenced, and a circuit structure is simple. The passive device itself does not produce the single event transient disturbance and an area and the power consumption of a storage unit are not increased, so the single event effect resistance of logic circuits such as the latch and a trigger can be effectively improved.

Single event transient disturbance reinforced latch circuit

A circuit including a data storage element; first and second input circuitry coupled respectively to first and second inputs of the data storage element and each including a plurality of components adapted to generate, as a function of an initial signal, first and second input signals respectively provided to the first and second inputs; wherein the data storage element includes a first storage node and is configured such that a voltage state stored at the first storage node is protected from a change in only one of the first and second input signals by being determined by the conduction state of a first transistor coupled to the first storage node and controlled based on the first input signal and by the conduction state of a second transistor coupled to the first storage node and controlled based on the second input signal.

Radiation hardened circuit

A circuit and methods for mitigating radiation-induced Single Event Effects (SEE) in Silicon-on-Insulator (SOI) Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits are presented. A primary logic output is generated from a primary logic gate in response to an input. A redundant logic output is generated from a redundant logic gate that duplicates the primary logic output in response to the input if an SEE is not present. An interleaved C-gate output is generated from an interleaved C-gate that emulates an inverter output when the primary logic output and the redundant logic output match, and does not changes its output when the primary logic output and the redundant logic output do not match during the SEE.

Single event transient and upset mitigation for silicon-on-insulator cmos technology

A circuit comprises a data storage element that includes a sampling stage configured to sample a data value, the sampling stage comprising a plurality of p-type devices, wherein at least one of the plurality of p-type devices is non-collinear relative to the other p-type devices, a plurality of n-type devices, wherein at least one of the plurality of n-type devices is non-collinear relative to the other n-type devices, a feedback stage configured to maintain the data value sampled by the sampling stage.

Data register for radiation hard applications

A dual data rate flip-flop circuit for reducing single event upset errors in the flip-flop circuit including two or more latch circuits connected in parallel. The latch circuits each have a clock input, data input, and latch circuit output. The dual data rate flip-flop circuit also includes a C-element, which has a plurality of inputs and a C-element output. The outputs of the latch circuits are provided to inputs of the C-element, and a keeper circuit is connected to the C-element output. An output buffer inverter connects to the C-element output and has an output corresponding to the dual data rate flip-flop circuit output.

Dual data rate flip-flop circuit

Energy harvesting systems are becoming more attractive for remote sensing applications. In this paper, we propose a new technique that performs the voltage scaling in conjunction with frequency scaling to achieve ultra low power design in ASIC/FPGA. To detect errors and obtain the corrected data without any loss in performance, a delayed clock flip-flop is utilized to borrow timing from non-critical paths to be used in critical paths evaluation. Conservative experimental results suggest that our design technique can reduce the power consumption in FPGAs by 31%for a 100% error free operation and a 1%disagreement between the output values of the main and the delayed flip-flop. This disagreement signal,referred by the name “risk” in this paper, is used as a status signal to indicate drop in the available safety margins for error free operation. This approach thereby gives maximum flexibility in all three critical areas: performance, power, and robustness.

Vallabh Srikanth Devarapalli

Papers

Dual data rate flip-flop circuit

Scavenger: An Adaptive Design Technique for Low Power ASIC/FPGA