Six different thin film solar cells consisting of either orthorhombic (α-SnS) or cubic (π-SnS) tin(II) sulfide absorber layers have been fabricated, characterized and evaluated. Absorber layers of either π-SnS or α-SnS were selectively deposited by temperature controlled Aerosol Assisted Chemical Vapor Deposition (AA-CVD) from a single source precursor. α-SnS and π-SnS layers were grown on molybdenum (Mo), Fluorine-doped Tin Oxide (FTO), and FTO coated with a thin amorphous-TiOx layer (am-TiOx-FTO), which were shown to have significant impact on the growth rate and morphology of the as deposited thin films. Phase pure α-SnS and π-SnS thin films were characterized by X-ray diffraction analysis (XRD) and Raman spectroscopy (514.5 nm). Furthermore, a series of PV devices with an active area of 0.1 cm2 were subsequently fabricated using a CdS buffer layer, intrinsic ZnO (i-ZnO) as an insulator and Indium Tin Oxide (ITO) as a top contact. The highest solar conversion efficiency for the devices consisting of the α-SnS polymorph was achieved with Mo (η = 0.82%) or FTO (η = 0.88%) as the back contacts, with respective open-circuit voltages (Voc) of 0.135 and 0.144 V, and short-circuit current densities (Jsc) of 12.96 and 12.78 mA cm−2. For the devices containing the π-SnS polymorph, the highest efficiencies were obtained with the am-TiOx-FTO (η = 0.41%) back contact, with a Voc of 0.135 V, and Jsc of 5.40 mA cm−2. We show that mild post-fabrication hot plate annealing can improve the Jsc, but can in most cases compromise the Voc. The effect of sequential annealing was monitored by solar conversion efficiency and external quantum efficiency (EQE) measurements.

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Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

Controlled thickness of a chemical-bath-deposited CdS buffer layer for a SnS thin film solar cell with more than 3% efficiency

SnS Nanosheets for 105th Harmonic Soliton Molecule Generation

Miniaturization, lightweight and highly integration have gradually become the main trends in the development of modern science and technology. Two-dimensional (2D) SnSe/SnS-based materials have recently received widespread attention in the field of thermoelectricity because of the remarkable physical transport properties. However, the peculiar crystal structure also ensures that SnSe and SnS materials can meet the requirements of the miniaturized and highly integrated functional devices, which make them the most notable interdisciplinary hotpots. In this review, we initially analyzed the basic physical properties and outlined the important achievements in thermoelectric field of SnSe/SnS. With the development of preparation technology for thin-film materials and nanomaterials, SnSe/SnS has been successfully utilized in multiple fields, including photothermal, photoelectric and ferroelectric fields. We then elaborated the multifunctions in SnSe/SnS, such as solar cells, photodetectors, photocatalysis, etc. Eventually, some personal summaries and prospects are demonstrated, which might highlight the importance of multifunction and promote the potential applications of 2D materials including SnSe/SnS.

https://matlab.labapress.com/data/article/export-pdf?id=624feccae8278b04b4a6f549

SnSe/SnS: Multifunctions Beyond Thermoelectricity

SnS and SnSe are renowned energy materials that are applied for photoelectric and thermoelectric conversions owing to their suitable band gap, close to 1 eV, and superior figure of merit (ZT), larg...

Victoria Elena González-Flores

Papers

Thin film solar cells of chemically deposited SnS of cubic and orthorhombic structures

Heterocyclic Boronates as Colorimetric and Chemical Sensors for Dialkyltin Derivatives