The developed automated test setup for microcontrollers with internal analog-to-digital converters is presented. The solution uses PXI-4110 and PXI-7841R modular instruments and LabVIEW software along with individually designed boards. The article also discusses testing methods of the internal digital and analog blocks of microcontrollers, algorithm of ADC's parameters measurement and electromagnetic interference protection during testing.

Automated test setup for functional and parametrical control of microcontrollers with internal ADC

The amplitude and timing properties of a Geiger discharge in a stand-alone SiPM cell have been investigated in detail. Use of a single stand-alone SiPM cell allows us to perform measurements with better accuracy than the multicell structure of conventional SiPMs. We have studied the dependence of the output charge and amplitude from an SiPM cell illuminated by focused light vs the number of primary photoelectrons. We propose a SPICE model which explains the amplitude over saturation (when the SiPM׳s amplitude is greater than the sum over all cells) characteristics of SiPM signals for more than one initial photoelectrons. The time resolutions of a SiPM cell have been measured for the case of single (SPTR) and multiphoton light pulses. The Full Width Half Max (FWHM) for SPTR has been found to be at the level of 30 ps for focused and 40 ps for unfocused light (100 μm cell size).

Amplitude and timing properties of a Geiger discharge in a SiPM cell

The article discusses the automated system for measurement of optical and electrical parameters of optoelectronic devices such as laser diodes and photodiodes using a National Instruments PXI-platform and Ophir laser power sensors. The typical connection circuit and method of parameters control are described.

Automated measurement system for optoelectronic devices based on National Instruments PXI-platform

Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption process. This paper presents technical ways to characterize key factors for laser based SEEs mapping testing system: output power from laser source, spot size focused by objective lens, opening window of Pockels cell, and calibration of injected laser energy. The laser based SEEs mapping testing system can work in a stable and controllable status by applying these methods. Furthermore, a sensitivity map of a Static Random Access Memory (SRAM) cell with a 65 nm technique node was created through the established laser system. The sensitivity map of the SRAM cell was compared to a map generated by a commercial simulation tool (TFIT), and the two matched well. In addition, experiments in this paper also provided energy distribution profile along Z axis that is the direction of the pulsed laser injection and threshold energy for different SRAM structures.

https://www.mdpi.com/1996-1944/12/20/3411/pdf

Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

As a result of analyzing more than 60 types of the modern transceivers ICs, the most sensitive functional units and the critical operation modes upon exposure the space radiation (especifically, TID and SEE effects) were identified

http://ieeexplore.ieee.org/iel7/7365564/7365565/07365673.pdf

The Critical Elements of the Modern Transceiver ICs upon Space Radiation Exposure

The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influence of laser pulse duration on simulation results is observed.

Femtosecond Laser Simulation Facility for SEE IC Testing

The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradation at any dose rate, temperature and total dose numerically. The possibility of application of the conversion model for the numerical estimation of radiation-induced increase of LM111 input current under low dose rate radiation impact was demonstrated experimentally. A test method using four-stage elevated single temperature irradiation was proposed. The ability of temperature-switching approach for simulation of enhanced low-dose-rate sensitivity was estimated and discussed.

Vitaliy A. Telets

Papers

Femtosecond Laser Simulation Facility for SEE IC Testing

Effect of elevated temperature irradiation on bipolar devices for space application