Showing papers by "Vittorio Romano published in 2013"
TL;DR: A nanoscale double-gate MOSFET is simulated with an energy-transport subband model for semiconductors including the effects of non-parabolicity by means of the Kane dispersion relation to form a system of nonlinear parabolic partial differential equations.
24 citations
TL;DR: It is proved that BiMADS is able to locate promising solutions with a tight budget of objective function evaluations, which makes it suitable for large-scale industrial applications.
14 citations
TL;DR: An energy-transport model based on the maximum entropy principle is derived for the simulation of a nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET) and a fictitious transition from the 3D to the 2D electrons and vice versa is introduced.
Abstract: An energy-transport model based on the maximum entropy principle is derived for the simulation of a nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET). The presence of both 3D and 2D electron gas is included along with the quantization in the transversal direction with respect to the oxide at the gate which gives rise to a subband decomposition of the electron energy. Both intra- and interparticle scatterings between the 2D and 3D electron gas are considered. In particular, a fictitious transition from the 3D to the 2D electrons and vice versa is introduced by adapting the approach used in [M. V. Fischetti and S. E. Laux, Phys. Rev. B, 48 (1993), pp. 2244--2274] in the context of a Monte Carlo simulation.
8 citations
01 Jan 2013
1 citations