W. Fulop

TL;DR: An empirical formula for the ionization coefficient given by α = CEg (C and g constants, E electric field) and which is considered as a common effective value for both holes and electrons yields tractable expressions for the breakdown voltages of abrupt and graded silicon pn junctions.

TL;DR: In this article, the radial light intensity Br across a diode with an outer annular contact with calculated values shows reasonable agreement if a linear relationship between Br and J r is assumed, and the voltage losses in the thick, fully contacted region are estimated and shown to be very small.

TL;DR: Anisotropic stress has been applied on shallow light emitting GaAsP junctions with stylii of relatively small radius of curvature made of diamond and for the purpose of extracting the emitted radiation.

TL;DR: The influence of a partial short in the cathode of a thyristor on current flow in the high-impedance region is investigated and an effective current gain, modified by a shorting dot (SD), is calculated showing, not only current but also geometrical dependence.

TL;DR: In this article, a method to obtain nonlinear distortion of small a.c. signals in a one-dimensional bipolar transistor is described, where the fundamental physical semiconductor equations are the basis from which the small-signal relations are derived.