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Warren E. Pickett

Researcher at University of California, Davis

Publications -  507
Citations -  20948

Warren E. Pickett is an academic researcher from University of California, Davis. The author has contributed to research in topics: Electronic structure & Superconductivity. The author has an hindex of 72, co-authored 499 publications receiving 19516 citations. Previous affiliations of Warren E. Pickett include United States Naval Research Laboratory & Science and Engineering Research Council.

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Electronic structure of the high-temperature oxide superconductors

TL;DR: In this paper, a review of the results of the density-functional type of electronic structure calculations is presented, and their results are compared with the relevant experimental data, showing that the important electronic states are dominated by the copper and oxygen orbitals, with strong hybridization between them.
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Superconductivity of MgB2: covalent bonds driven metallic.

TL;DR: Calculations on MgB2 and related isoelectronic systems indicates that the layer of Mg2+ ions lowers the nonbonding B pi ( p(z)) bands relative to the bonding sigma ( sp(x)p(y)) bands compared to graphite, causing sigma-->pi charge transfer and sigma band doping.
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Pseudopotential methods in condensed matter applications

TL;DR: In this article, an extensive list of applications of the self-consistent pseudopotential method for describing properties of condensed matter systems is given, with special attention given to the developments in iteration to selfconsistency, and to the implications of the variational nature of the energy.
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Electronic structure and half-metallic transport in the La1-xCaxMnO3 system

TL;DR: Strong local environment effects arising from neighboring cation charge differences that suggest localization of the low density of minority carriers, leading to effective half-metallic ferromagnetism in the CMR regime are identified.
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Half Metallic Magnets

TL;DR: In this article, half metals belong to a new class of materials that look set to play a key role in next-generation electronic devices, and half metals are used for the first time.