An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

A method for forming a liquid crystal display includes the steps of depositing a first metal layer on a substrate, and depositing a second metal layer on the first metal layer opposite the substrate. The first and second metal layers are patterned to provide a gate electrode on a TFT area of the substrate and to provide a gate pad on a pad area of the substrate. An insulating layer is formed on the gate electrode and on the gate pad, and on the substrate, and a semiconductor layer is formed on the insulating layer opposite the gate electrode wherein the semiconductor layer includes a channel region opposite the gate electrode and first and second spaced apart source/drain regions separated by the channel region. First and second spaced apart metal source/drain electrodes are formed on the respective first and second spaced apart semiconductor source/drain regions, and a protective layer is formed on the exposed portion of the first semiconductor layer opposite the substrate, on the first and second metal source/drain electrodes opposite the substrate, and on the insulating layer opposite the gate pad. A first contact hole is formed in the protective layer exposing a portion of one of the source/drain electrodes, and a second contact hole is formed in the protective layer and the insulating layer exposing a portion of the gate pad wherein the second contact hole exposes only a surface portion of the gate pad opposite the substrate. A transparent conductive layer is formed on the protective layer opposite the substrate, and the transparent conductive layer is patterned to form a pixel electrode electrically connected to the exposed portion of the source/drain electrode and to the exposed portion of the gate pad.

Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

An ITO (indium tin oxide) layer and a negative photoresist are deposited sequentially on the substrate 100 having a gate wire, a storage wire, a data wire and a storage electrode. The negative photoresist is developed through front exposure and the ITO layer is etched to form a pixel electrode. Because the portions of negative photoresist exposed to light remain after development, pixel defects due to particles placed between pixel regions are reduced. Both the rear exposure and the front exposure may be used. In the rear exposure, it is difficult to remain the portions of the ITO layer at the positions corresponding to the contact portion of the drain electrode and the pixel electrode, the storage line, the gate pads and the data pads. Accordingly, the front exposure is then executed by using the first mask having openings thereon. The negative photoresist is developed, and the ITO layer is patterned. After etching the ITO layer, because the portion of the ITO layer outside the display region remains as a whole, the portions of the ITO layers on the gate pads and the data pads remains through front exposure using a positive photoresist.

Manufacturing methods of liquid crystal displays

Methods of forming active matrix display devices with reduced susceptibility to image sticking include the steps of forming a gate electrode on a face of a substrate and then forming a first insulating layer on the gate electrode and on the face to electrically isolate the gate electrode from adjacent regions. A first amorphous semiconductor layer is then formed on the first insulating layer. In particular, the first amorphous semiconductor layer, which acts as the active region of the TFT, is patterned to extend opposite the gate electrode. A channel protection layer is also formed on the first amorphous semiconductor layer. The channel protection layer is designed to protect the channel portion of the active region in the first amorphous semiconductor layer from potential damage which may occur during subsequent process steps. Then, the first insulating layer and the channel protection layer are etched simultaneously until the face of the substrate is exposed. Here, the step of forming a gate electrode includes the steps of forming a first conductive layer having a thickness of about 2000 Å on the face of the substrate and then patterning the first conductive layer to define a gate electrode of a thin-film transistor and a common electrode. The first insulating layer is then formed on the gate electrode and the common electrode, but is subsequently removed from the common electrode to reduce image-sticking effects which may impair display performance in in-plane switching (IPS) TFT-LCD display devices.

Methods of forming active matrix display devices with reduced susceptibility to image-sticking and devices formed thereby

The present invention is directed to a method for fabricating a liquid crystal display panel in which a repair line is formed of a gate line metal and a data line metal to facilitate the repair process of any broken gate line Any disconnected data lines can be repaired Repairing the disconnected data lines involves their short-circuit, using a laser beam, with the repair lines vertically formed underneath the data lines That is one repair line, which is adjacent to the connection part of the repair lines, and the data lines are short-circuited Thus, the disconnected data line can be repaired through the repair lines and the auxiliary repair lines with ease, thus providing a simple repair process

Liquid crystal display panel and method for fabricating the same

The present invention reduces overall electrostatic capacity by effectively reducing capacitor surface area. In one embodiment, each data line is formed so that it directly intersects or overlaps a repair line that surrounds the LCD screen a single time at an end of the data line corresponding to a data line input pad. The other end of the data line does not intersect with the repair line, but instead uses a conductive layer that overlaps this other end of the data line at one end and the repair line at another end. In another embodiment, a plurality of repair lines that each surround the LCD screen are used. Groups of data lines are associated with one repair line and the widths of the data lines are narrowed if the data line intersects a repair line that it is not associated with. Accordingly, by preventing one end of a data line from intersecting with a repair line, or by reducing the width of data lines which cross a non-associated repair line when a plurality of repair lines are used, the overall electrostatic capacity is reduced.

Won-Hee Lee

Papers

Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure

Manufacturing methods of liquid crystal displays

Methods of forming active matrix display devices with reduced susceptibility to image-sticking and devices formed thereby

Liquid crystal display panel and method for fabricating the same

Liquid crystal display having a repair line