Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Plasma processing method and apparatus

The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.

Substrate processing method

A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

Plasma Processing Apparatus

A method for etching a substrate having thereon a silicon dioxide-containing layer disposed above a TiN layer is disclosed. The method includes positioning the substrate in the plasma processing chamber. There is also included flowing an etchant source gas that includes CO, CHF 3 , neon and N 2 into the plasma processing chamber. Further, there is included forming a plasma out of the etchant source gas within the plasma processing chamber to cause etching of the silicon-dioxide-containing layer.

Techniques for etching an oxide layer

PROBLEM TO BE SOLVED: To provide a method capable of generating a stable and uniform plasma discharge in the surface treatment of an indirect discharge system by the plasma discharge under atmospheric pressure to form excitation active species, rapidly transporting the thus formed excitation active species from a discharge region and efficiently treating the surface of the work even in a remote position, and an apparatus therefor. SOLUTION: In the process of subjecting the surface treatment of the work 18 by generating the gas discharge in a prescribed gas under the atmospheric pressure or a pressure near the same to form the excitation active species, feeding the treating gas contg. the excitation active species near to the surface of the work and exposing the surface to the excitation active species, the flow velocity of the treating gas fed from the discharge region is accelerated by a pressure difference between the inside of a gas flow passage 12 and the atmosphere near the work 18 or providing the flow passage of the treating gas with a throttling means. Further, the flow passage of the treating gas is provided with a heating means, such as electric heater to maintain the high temp. of the treating gas sent near to the surface of the work 18. COPYRIGHT: (C)1999,JPO

Surface treatment and apparatus therefor

PROBLEM TO BE SOLVED: To greatly reduce the consumption of rare gas including helium gas and easily generate plasma under atmospheric pressure. SOLUTION: Oxygen gas and helium gas are supplied from an oxygen gas cylinder 34 and a helium gad cylinder 36 to a gas flow passage 23 formed with a dielectric 1 and high frequency voltage is applied between electrodes 2a, 2b with a high frequency power supply to generate plasma in a plasma generation area 22. Then, the supply of the helium gas is stopped, plasma is generated only by oxygen gas and a resulting active component is radiated to a material to be treated 8 to perform ashing or etching treatment to the material. COPYRIGHT: (C)1998,JPO

Atmospheric pressure plasma generating method and device and surface treatment method

PURPOSE: To rationalize the process for treatment or inspection of wafer and substrate in production of semiconductor device and liquid crystal display panel and to improve the yield thereof CONSTITUTION: A route for transporting the wafers 2 or the substrates is provided in its mid-way with a means 12 for generating gaseous discharge in a prescribed discharge gas under the atm pressure or a pressure approximate thereto The excited active species of the discharge gas formed by the means are brought into contact with the wafer surfaces and also the gaseous species of the discharge gas are adequately selected, thereby, the surface treatments, such as ashing, washing and hydrophilicity imparting to the wafers, are executed inline COPYRIGHT: (C)1996,JPO

Treating device for wafer and substrate and treatment method therefor and transfer device for wafer and substrate

PROBLEM TO BE SOLVED: To achieve the in-line operation of plasma cleaning. SOLUTION: A liquid crystal panel after wet cleaning is arranged on a rotary table 22 one by one from a material supplying unit 12 by a material feeding robot 20 and conveyed to a plasma cleaning unit 14 by the rotary table 22. A plasma processing unit 26 generates plasma with nitrogen gas at atmospheric pressure and cleans the liquid crystal panel. The plasma-cleaned liquid crystal panel is moved to a main turn table 68 and sequentially conveyed through a conducting-film attaching unit 66, a temporarily chip attaching unit 76 and a main chip attaching unit 94 by the turn of the main turn table 68. An anisotropic conducting film is thermocompression-bonded by the conducting film attaching unit 66. A semiconductor chip is temporarily attached to the anisotropic conducting film by a temporarily chip attaching a robot 88 of the temporary chip attaching unit 76 and mainly attached by a main compression- bonding head 98 of a main chip attaching unit 94. COPYRIGHT: (C)1999,JPO

Method and device for mounting electronic component

PROBLEM TO BE SOLVED: To reduce plasma damage on an object to be processed by simply adding a gas to conventional processing gas. SOLUTION: Discharge He gas us fed between a pair of electrodes 12, 14 of an atmospheric plasma processing system through feeding means 42a, 44a to generate plasma under atmospheric pressure and an object 1 is processed. In this regard, an additive gas is fed through feeding means 42b or 44b. The additive gas is an inner gas selected tram argon Ar, krypton Kr or xenon Xe. Alternatively, a reaction gas selected from O2 , CF4 , N2 , CO2 , SF6 and CHF3 , a gas containing at least O, N, F, Cl, or the gas phase of a liquid containing them is employed as an additive gas. A gas for enhancing the wettability on the surface of object, and a reaction gas, e.g. ashing gas or etching gas, are also fed through feeding means 42c or 44c depending on the processing. When a reactive gas is employed as an additive gas, an additive gas different from the reaction gas for processing is employed.

武宮下

Papers

Surface treatment and apparatus therefor

Atmospheric pressure plasma generating method and device and surface treatment method

Treating device for wafer and substrate and treatment method therefor and transfer device for wafer and substrate

Method and device for mounting electronic component

Method and system for plasma processing

武 宮下

Papers

Surface treatment and apparatus therefor

Atmospheric pressure plasma generating method and device and surface treatment method

Treating device for wafer and substrate and treatment method therefor and transfer device for wafer and substrate

Method and device for mounting electronic component

Method and system for plasma processing

武宮下