The purpose of this paper is to describe the five-parameter grain boundary character distribution (GBCD) of polycrystalline silicon and compare it to distributions measured in metals and ceramics. The GBCD was determined from the stereological analysis of electron backscatter diffraction maps. The distribution of grain boundary disorientations is non-random and has peaks at 36°, 39°, 45°, 51°, and 60°. The axis-angle distribution reveals that most of the grain boundaries have misorientations around the [111], [110], and [100] axes. The most common grain boundary type (30 % number fraction) has a 60° misorientation around [111] and of these boundaries, the majority are twist boundaries. For other common boundaries, symmetric tilt configurations are preferred. The grain boundary character distribution of Si is distinct from those previously observed for metals and ceramics. The measured grain boundary populations are inversely correlated to calculated grain boundary energies available in the literature.

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The five parameter grain boundary character distribution of polycrystalline silicon

https://hal.archives-ouvertes.fr/hal-01435288/document

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidification

Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon

Investigation of grain boundary grooves at the solid–liquid interface during directional solidification of multi-crystalline silicon: in situ characterization by X-ray imaging

Xavier Guichard

Papers

Twinning occurrence and grain competition in multi-crystalline silicon during solidification