A method for selectively etching a silicon nitride layer on a substrate includes arranging a substrate on a substrate support of a substrate processing chamber The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device The gas dispersion device includes a plurality of holes in fluid communication with the upper chamber region and the lower chamber region The method includes supplying an etch gas mixture to the upper chamber region and striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil The etch gas mixture etches silicon nitride, promotes silicon dioxide passivation and promotes polysilicon passivation, The method includes selectively etching the silicon nitride layer on the substrate and extinguishing the inductively coupled plasma after a predetermined period

Systems and methods for ultrahigh selective nitride etch

A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.

System and method for increasing electron density levels in a plasma of a substrate processing system

A substrate support includes an inner portion arranged to support a substrate, a lift ring surrounding the inner portion, the lift ring arranged to support an outer edge of the substrate, and a controller configured to control an actuator to adjust a height of the lift ring relative to the inner portion by selectively raising and lowering at least one of the lift ring and the inner portion of the substrate support. To adjust the height of the lift ring, the controller selectively adjusts the height of the lift ring to a transfer height for transfer of the substrate to the lift ring and retrieval of the substrate from the lift ring, and adjusts the height of the lift ring to a processing height for processing of the substrate.

Wafer lift ring system for wafer transfer

A substrate support includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller that calculates a desired pocket depth of the substrate support. Pocket depth corresponds to a distance between an upper surface of the edge ring and an upper surface of the substrate. Based on the desired pocket depth, the controller selectively controls an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

Variable depth edge ring for etch uniformity control

This disclosure relates generally to valves, and more particularly, to gas valve assemblies. In one illustrative but non-limiting example, a valve assembly may include a valve body, a valve situated in a fluid path of the valve body, a valve actuator for selectively moving the valve actuator, one or more sensors in communication with the fluid path, a controller secured relative to the valve body and in communication with the sensors, and memory operatively coupled to the controller. A user interface may be in communication with the memory and the controller and may be configured to receive a selection from a user for selecting one of two or more selectable options from the memory. The controller may compare sensed parameters to threshold values associated with the selected option. The user interface may have a lock on it to prevent tampering and to provide accountability.

Gas valve with electronic health monitoring

An MFC includes: a proportional valve; a mass flow sensor; a first flow line connecting from an outlet of the proportional valve through the mass flow sensor to an exit line; a second flow line joining the first flow line at a first junction located upstream of the mass flow sensor and at a second junction located downstream of the mass flow sensor; a switching valve placed such that the switching valve can regulate a flow of a gas through the first flow line or the second flow line; and a control device connected to provide a feedback control loop for regulating the proportional valve based on signals measured by the mass flow sensor, wherein the control device includes a program for keeping a rate of a flow exiting the exit line substantially constant when the flow is through the second flow line.

xiao-sheng Guan

Papers

Mass flow controllers and methods for auto-zeroing flow sensor without shutting off a mass flow controller