PROBLEM TO BE SOLVED: To provide a technology capable of obtaining a polycrystal silicon rod having a favorable shape with less warpage and high roundness in the cross-sectional shape without lowering production efficiency.SOLUTION: Source gas supply nozzles 9 and metal electrodes (pairs of electrodes) 10 provided inside a reactor included in a polycrystal silicon production device satisfy following arrangement relations. Namely, an imaginary concentric circle C (with a radius c) which is centered in the middle of a disk-shaped base plate 5 has an area S=S/2 which is a half of the area Sof the base plate 5. In addition, a concentric circle A and a concentric circle B are each an imaginary concentric circle concentric with the concentric circle C and having a radius a and a radius b (a<b<c), respectively. In the present invention, the pairs of electrodes 10 are disposed inside the imaginary concentric circle C and outside the imaginary concentric circle B, and each of the gas supply nozzles 9 is disposed inside the imaginary concentric circle A. Furthermore, the difference between the radius b of the concentric circle B and the radius a of the concentric circle A is 20-50 cm.

Device for producing polycrystal silicon and method for producing polycrystal silicon

[Problem] To provide a technology of obtaining a polycrystalline silicon bar, wherein generation of popcorn phenomenon on the polycrystalline silicon surface is suppressed even with high-speed precipitation response, and heavy-metal contamination due to generation of powder, and abnormal protruding precipitation are eliminated.
[Solution] Raw material gas supply nozzles (9) are disposed inside of a virtual concentric circle having the center thereof at the center of a disc-like bottom plate (5) (said circle having an area (S) that is the half the area (S 0 ) of the bottom plate (5)). A raw material gas is jetted into a bell jar (1) from the gas supply nozzles (9) at a flow speed of 150 m/sec or higher. Though in the example in the figure 3, four gas supply nozzles (9) are provided, in any case, the gas supply nozzles (9) are disposed inside of a concentric circle (C). In the example in the figure 3, in addition to a gas supply nozzle (9) provided at the center portion of the bottom plate (5), three gas supply nozzles (9) are disposed at positions of equilateral triangle apexes in contact with a circumscribed circle (E) having, at the center, the gas supply nozzle (9) at the center portion. A smooth circulation flow is formed in a reacting furnace by disposing the gas supply nozzles in such a manner.

Apparatus for manufacturing polycrystalline silicon and method for manufacturing polycrystalline silicon

PROBLEM TO BE SOLVED: To provide a technique of acquiring a polycrystalline silicon rod, which is hardly warped and has such an excellent shape that the cross-sectional roundness is high, without decreasing production efficiency.SOLUTION: A plurality of gaseous raw material supply nozzles 9 and a plurality of metal electrodes (electrode pairs) 10, which (nozzles and electrodes) are arranged respectively in a reaction furnace of an apparatus for producing polycrystalline silicon, satisfy the following arrangement relationship. Namely, a virtual concentric circle C (the radius (c)) having the center in the middle of a disk-shaped bottom plate 5 has the area S=S/2 being a half of the area Sof the bottom plate 5. Another concentric circle A and a different concentric circle B are each the virtual concentric circle which has the center at the position similar to that of the virtual concentric circle C and has the radius (a) or (b) ((a)<(b)<(c)). The plurality of electrode pairs 10 are disposed on the inside of the virtual concentric circle C and on the outside of the virtual concentric circle B and the plurality of gaseous raw material supply nozzles 9 are disposed on the inside of the virtual concentric circle A. A difference between the radius (a) of the virtual concentric circle A and that (b) of the virtual concentric circle B is set within 20-50 cm.

Apparatus and method for producing polycrystalline silicon

Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon

PROBLEM TO BE SOLVED: To provide a technique that prevents popcorn from being generated on a polycrystalline silicon surface and prevents a powder caused by thermal decomposition of reaction gas from being generated in spite of high-speed precipitation reaction.SOLUTION: Six gas nozzles 9 are arranged at six-time symmetrical positions on a virtual circle S having its center in the center of a bottom plate 5. Four gas nozzles 9v among them are perpendicular jet nozzles such that the direction of a center vector of gas ejection is perpendicular to the bottom plate 5 and two gas nozzles 9c are oblique jet nozzles such that the center vector of gas ejection has a component in a tangential direction of the virtual circle S. Reaction gas supplied from an oblique jet nozzle 9c creates a state in which the component imparts circling force to circulation of reaction gas in a chamber 1 in the tangential direction of the virtual circle S, and the reaction gas circulates wholly in the chamber 1 while circling. Then the circling component makes a mixing state of the reaction gas better.

Polycrystalline silicon and polycrystalline silicon manufacturing device

[Problems] To provide a polycrystalline silicon rod used for the recharging in the FZ method or the CZ method, the straight body portions thereof assuming an easily transferable shape and excelling in transferability. [Means for Solution] The polycrystalline silicon rod is obtained by depositing and growing silicon, by the chemical vapor-phase deposition method, on a silicon core member which includes a pair of silicon rods erected on the electrodes and a bridging portion connecting the upper ends of the silicon rods, wherein the straight body portions of the silicon rod erected on the electrodes have a diameter profile in the lengthwise direction thereof, and a minimum diameter is adjusted to be 60 to 95% of a maximum diameter.

小田開行

Papers

Polycrystalline silicon rod and device for producing same

小田 開行

Papers

Polycrystalline silicon rod and device for producing same

小田開行