Showing papers by "Xiaohua Ma published in 2006"
01 Oct 2006
TL;DR: In this article, the gate-induced drain leakage current (GIDL) current was investigated in LDD nMOSFETs and it was shown that under constant drain-to-gate voltage (VDG) the difference between ID in the off-state ID-VG characteristics and the corresponding one in the ID-VD characteristics, which is defined as DIFF, versus VDG shows a peak.
Abstract: The gate-induced drain leakage current (GIDL) current is investigated in LDD nMOSFET's. It is shown that under constant drain-to-gate voltage (VDG) the difference between ID in the off-state ID-VG characteristics and the corresponding one in the off-state ID-VD characteristics, which is defined as DIFF, versus VDG shows a peak. Moreover, the natural logarithm of the maximum D IFF (DIFF, MAX) varies linearly with V DG. The DIFF, MAX-VDG curves of different thickness gate oxide(4nm and 1.4nm) are presented. Moreover, it is found that DIFF curve shifts upwards with increasing temperature
1 citations