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Xinghua Zhu

Researcher at Chengdu University of Information Technology

Publications -  39
Citations -  457

Xinghua Zhu is an academic researcher from Chengdu University of Information Technology. The author has contributed to research in topics: Thin film & Crystal. The author has an hindex of 12, co-authored 28 publications receiving 342 citations.

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Mechanical exfoliation and Raman spectra of ultrathin PbI2 single crystal

TL;DR: In this article, the authors reported the successful fabrication of ultrathin PbI2 single crystal by mechanical exfoliation method after the realization of graphene and the properties of samples were investigated by X-ray diffraction, atomic force microscopy and Raman scattering.
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Structure and magnetic properties of Co-substituted NiZn ferrite thin films synthesized by the sol–gel process

TL;DR: The structure and magnetic properties of Ni 0.5Zn0.5CoxFe2−xO4 ferrite thin films have been investigated in this paper, where the diffraction peak shifted towards the lower angle and the lattice parameter increased with Co substitution.
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Influence of electrolyte proportion on the performance of dye-sensitized solar cells

TL;DR: In this article, the performance of dye-sensitized solar cells (DSSC) depends strongly on the electrolyte, and the results revealed DSSC with electrolyte prepared by organic solvent show better performance than that of inorganic solvent.
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Effects of aging time and annealing temperature on structural and optical properties of sol-gel ZnO thin films

TL;DR: In this paper, the structural properties of ZnO thin films were investigated by X-ray diffraction (XRD) patterns and atomic force microscope (AFM) images, and the results indicated that the film possess a hexagonal wurtzite structure with preferred orientation along the (002) direction.
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Structure and static magnetic properties of Zr-substituted NiZn ferrite thin films synthesized by sol–gel process

TL;DR: In this paper, the average grain size of Zr-substituted NiZn ferrtie thin films increased with Zr substitution, and the saturation magnetization gradually increased with the increase of zr substitution.